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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bellet-Amalric, Edith
CEA Grenoble
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Topics
Publications (10/10 displayed)
- 2024Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substratescitations
- 2023Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substratescitations
- 2022200 mm-scale growth of 2D layered GaSe with preferential orientationcitations
- 2019Three-phase metal-insulator transition and structural alternative for a VO2 film epitaxially grown on Al2O3(0001)citations
- 2014Boron-doped superlattices and Bragg mirrors in diamondcitations
- 2011Strain relaxation in GaN/Al0.1Ga0.9N superlattices for mid-infrared intersubband absorptioncitations
- 2007Structure and magnetism of self-organized Ge(1-x)Mn(x) nano-columnscitations
- 2006High-Curie-temperature ferromagnetism in self-organized GeMn nanocolumns
- 2006Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductorcitations
- 2005X-ray absorption near-edge structure and valence state of Mn in (Ga,Mn)Ncitations
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article
Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates
Abstract
Sn thin films were deposited at -193°C in ultra high vacuum on InSb(110) substrates. Cryogenic cooling ensured controllable crystallinity and homogeneous thickness of thin films below15 nm. We employed different in-situ capping strategies immediately after Sn deposition to minimize likelihood of dewetting of the thin films. X-ray diffraction show how the Sn crystalline structure is influenced by the different cappings. The film is predominantly in the cubic Sn phase alpha-Sn, is epitaxial on InSb and presents very low mosaicity. However, we identified a correlation between alumina capping and the abundance of the tetragonal Sn phase (beta-Sn). Heating by the alumina e-beam source is a potential reason for the partial crystalline phase transition in the Sn layer. The presence of the beta-Sn phase caused the superconducting behavior of the films by percolation effect. Finally, this work showed that ultra-thin films of Sn on InSb substrates can be produced controllably, with perspectives for quantum computing platforms.