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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Li, Li
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor depositioncitations
- 2023First-Ply Failure Analysis of Helicoidal/Bouligand Bio-Inspired Laminated Composite Platescitations
- 2022Tuning the crystal structure and optical properties of selective area grown InGaAs nanowirescitations
- 2022Effective Passivation of InGaAs Nanowires for Telecommunication Wavelength Optoelectronicscitations
- 2021Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
- 2021Multivariate genomic analysis and optimal contributions selection predicts high genetic gains in cooking time, iron, zinc, and grain yield in common beans in East Africacitations
- 2021Passivation of InP solar cells using large area hexagonal-BN layerscitations
- 2019Damage analysis of a perfect broadband absorber by a femtosecond lasercitations
- 2018Tungsten Refractory Plasmonic Material for High Fluence Bowtie Nano-antenna
- 2018Impurity Gettering by Diffusion-doped Polysilicon Passivating Contacts for Silicon Solar Cellscitations
- 2017Imaging of doped iron pnictides across a structural phase transition
- 2017Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloyscitations
- 2016Cluster analysis of acoustic emission signals for 2D and 3D woven carbon fiber/epoxy compositescitations
- 2016Shear-Coupled Grain Growth and Texture Development in a Nanocrystalline Ni-Fe Alloy during Cold Rollingcitations
- 2015Identification of the damage in woven composites based on acoustic emission cluster analysis
- 2014Encapsulated <scp>PDMS</scp> Microspheres with Reactive Handlescitations
- 2013On the mechanical effects of a nanocrystallisation treatment for ZrO2 oxide films growing on a zirconium alloycitations
- 2013Reversible loss of bernal stacking during the deformation of few-layer graphene in nanocompositescitations
- 2012Experimental and numerical study of the effects of a nanocrystallisation treatment on high-temperature oxidation of a zirconium alloycitations
- 2011Work softening in nanocrystalline materials induced by dislocation annihilationcitations
- 2011Ultrafiltration by gyroid nanoporous polymer membranescitations
- 2010Hydrophilic nanoporous materials
- 2008Plastic behavior of a nickel-based alloy under monotonic-tension and low-cycle-fatigue loadingcitations
- 2007Anion selectivity in zwitterionic amide-funtionalised metal salt extractantscitations
Places of action
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article
Large-area epitaxial growth of InAs nanowires and thin films on hexagonal boron nitride by metal organic chemical vapor deposition
Abstract
<p>Large-area epitaxial growth of III-V nanowires and thin films on van der Waals substrates is key to developing flexible optoelectronic devices. In our study, large-area InAs nanowires and planar structures are grown on hexagonal boron nitride templates using metal organic chemical vapor deposition method without any catalyst or pre-treatments. The effect of basic growth parameters on nanowire yield and thin film morphology is investigated. Under optimised growth conditions, a high nanowire density of 2.1 × 10<sup>9</sup> cm<sup>−2</sup> is achieved. A novel growth strategy to achieve uniform InAs thin film on h-BN/SiO<sub>2</sub>/Si substrate is introduced. The approach involves controlling the growth process to suppress the nucleation and growth of InAs nanowires, while promoting the radial growth of nano-islands formed on the h-BN surface. A uniform polycrystalline InAs thin film is thus obtained over a large area with a dominant zinc-blende phase. The film exhibits near-band-edge emission at room temperature and a relatively high Hall mobility of 399 cm<sup>−2</sup>/(Vs). This work suggests a promising path for the direct growth of large-area, low-temperature III-V thin films on van der Waals substrates.</p>