Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2023Environmental Sensitivity of GaN Nanofins Grown by Selective Area Molecular Beam Epitaxy1citations
  • 2022Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy12citations

Places of action

Chart of shared publication
Wörle, Simon
2 / 2 shared
Pantle, Florian
2 / 3 shared
Karlinger, Monika
2 / 2 shared
Stutzmann, Martin
2 / 12 shared
Rauh, Felix
1 / 2 shared
Höldrich, Theresa
1 / 1 shared
Sirotti, Elise Ida
1 / 3 shared
Becker, Fabian
1 / 1 shared
Chart of publication period
2023
2022

Co-Authors (by relevance)

  • Wörle, Simon
  • Pantle, Florian
  • Karlinger, Monika
  • Stutzmann, Martin
  • Rauh, Felix
  • Höldrich, Theresa
  • Sirotti, Elise Ida
  • Becker, Fabian
OrganizationsLocationPeople

article

Environmental Sensitivity of GaN Nanofins Grown by Selective Area Molecular Beam Epitaxy

  • Wörle, Simon
  • Kraut, Max
  • Pantle, Florian
  • Karlinger, Monika
  • Stutzmann, Martin
  • Rauh, Felix
Abstract

<jats:title>Abstract</jats:title><jats:p>Nanostructures exhibit a large surface-to-volume ratio, which makes them sensitive to their ambient conditions. In particular, GaN nanowires and nanofins react to their environment as adsorbates influence their (opto-) electronic properties. Charge transfer between the semiconductor surface and adsorbed species changes the surface band bending of the nanostructures, and the adsorbates can alter the rate of non-radiative recombination in GaN. Despite the importance of these interactions with the ambient environment, the detailed adsorption mechanisms are still not fully understood. In this article, we present a systematic study concerning the environmental sensitivity of the electrical conductivity of GaN nanofins. We identify oxygen- and water-based adsorbates to be responsible for a quenching of the electrical current through GaN nanofins due to an increased surface band bending. Complementary contact potential difference measurements in controlled atmospheres on bulk m- and c-plane GaN reveal additional complexity with regard to water adsorption, for which surface dipoles might play an important role besides an increased surface depletion width. The sensitive reaction of the electrical parameters to the environment and surface condition underlines the necessity of a reproducible pre-treatment and/or surface passivation. The presented results help to further understand the complex adsorption mechanisms at GaN surfaces. Due to the sensitivity of the nanofin conductivity on the environment, such structures could perform well as sensing devices.</jats:p>

Topics
  • surface
  • Oxygen
  • semiconductor
  • electrical conductivity
  • quenching