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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Stutzmann, Martin
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Exciton confinement in homo- and heteroepitaxial ZnO/Zn(1-x)Mg(x)O quantum wells with x < 0.1
- 2023Annealing‐Free Ohmic Contacts to <i>n</i>‐Type GaN via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Sub‐Nanometer AlO<i><sub>x</sub></i>
- 2023Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Aluminacitations
- 2023Environmental Sensitivity of GaN Nanofins Grown by Selective Area Molecular Beam Epitaxycitations
- 2022Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxycitations
- 2018Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitorscitations
- 2017Electrochemical characterization of GaN surface statescitations
- 2017Hybrid Photovoltaics – from Fundamentals towards Applicationcitations
- 2016α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistorscitations
- 2015Bipolar polaron pair recombination in P3HT/PCBM solar cells
- 2009Metal–insulator transition and superconductivity in highly boron-doped nanocrystalline diamond filmscitations
- 2009Low-temperature transport in highly boron-doped nanocrystalline diamondcitations
Places of action
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article
Environmental Sensitivity of GaN Nanofins Grown by Selective Area Molecular Beam Epitaxy
Abstract
<jats:title>Abstract</jats:title><jats:p>Nanostructures exhibit a large surface-to-volume ratio, which makes them sensitive to their ambient conditions. In particular, GaN nanowires and nanofins react to their environment as adsorbates influence their (opto-) electronic properties. Charge transfer between the semiconductor surface and adsorbed species changes the surface band bending of the nanostructures, and the adsorbates can alter the rate of non-radiative recombination in GaN. Despite the importance of these interactions with the ambient environment, the detailed adsorption mechanisms are still not fully understood. In this article, we present a systematic study concerning the environmental sensitivity of the electrical conductivity of GaN nanofins. We identify oxygen- and water-based adsorbates to be responsible for a quenching of the electrical current through GaN nanofins due to an increased surface band bending. Complementary contact potential difference measurements in controlled atmospheres on bulk m- and c-plane GaN reveal additional complexity with regard to water adsorption, for which surface dipoles might play an important role besides an increased surface depletion width. The sensitive reaction of the electrical parameters to the environment and surface condition underlines the necessity of a reproducible pre-treatment and/or surface passivation. The presented results help to further understand the complex adsorption mechanisms at GaN surfaces. Due to the sensitivity of the nanofin conductivity on the environment, such structures could perform well as sensing devices.</jats:p>