| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Rubi, Diego
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2024Multi-mem behavior at reduced voltages in La1/2¿Sr1/2¿Mn1/2¿Co1/2¿O3-¿ perovskite modified with Sm:Ce¿O2citations
- 2024Multi-mem behavior at reduced voltages in La 1/2 Sr 1/2 Mn 1/2 Co 1/2 O 3-x perovskite modified with Sm:Ce O 2citations
- 2023Oxygen vacancy dynamics in Pt/TiO<sub>x</sub>/TaO<sub>y</sub>/Pt memristors: exchange with the environment and internal electromigrationcitations
Places of action
| Organizations | Location | People |
|---|
article
Oxygen vacancy dynamics in Pt/TiO<sub>x</sub>/TaO<sub>y</sub>/Pt memristors: exchange with the environment and internal electromigration
Abstract
<jats:title>Abstract</jats:title><jats:p>Memristors are expected to be one of the key building blocks for the development of new bio-inspired nanoelectronics. Memristive effects in transition metal oxides are usually linked to the electromigration at the nanoscale of charged oxygen vacancies (OV). In this paper we address, for Pt/TiO<jats:sub><jats:italic>x</jats:italic></jats:sub>/TaO<jats:sub><jats:italic>y</jats:italic></jats:sub>/Pt devices, the exchange of OV between the device and the environment upon the application of electrical stress. From a combination of experiments and theoretical simulations we determine that both TiO<jats:sub><jats:italic>x</jats:italic></jats:sub> and TaO<jats:sub><jats:italic>y</jats:italic></jats:sub> layers oxidize, via environmental oxygen uptake, during the electroforming process. Once the memristive effect is stabilized (post-forming behavior) our results suggest that oxygen exchange with the environment is suppressed and the OV dynamics that drives the memristive behavior is restricted to an internal electromigration between TiO<jats:sub><jats:italic>x</jats:italic></jats:sub> and TaO<jats:sub><jats:italic>y</jats:italic></jats:sub> layers. Our work provides relevant information for the design of reliable binary oxide memristive devices.</jats:p>