| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ouerghi, Abdelkarim
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Direct Reconstruction of the Band Diagram of Rhombohedral-Stacked Bilayer WSe 2 –Graphene Heterostructure via Photoemission Electron Microscopycitations
- 2024Stacking order and electronic band structure in MBE-grown trilayer WSe$_2$ filmscitations
- 2024Atomic‐Layer Controlled Transition from Inverse Rashba–Edelstein Effect to Inverse Spin Hall Effect in 2D PtSe<sub>2</sub> Probed by THz Spintronic Emissioncitations
- 2023Unidirectional Rashba spin splitting in single layer WS<sub>2(1−x)</sub>Se<sub>2x</sub> alloycitations
- 2023Quasi van der Waals Epitaxy of Rhombohedral-Stacked Bilayer WSe 2 on GaP(111) Heterostructurecitations
- 2023Intrinsic defects and mid-gap states in quasi-one-dimensional indium telluridecitations
- 2023Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloycitations
- 2023Electronic properties of rhombohedrally stacked bilayer W Se 2 obtained by chemical vapor depositioncitations
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2021Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloyscitations
- 2021Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys
- 2020Time Resolved Photoemission to Unveil Electronic Coupling Between Absorbing and Transport Layers in a Quantum Dot Based Solar Cellcitations
- 2017Stacking fault and defects in single domain multilayered hexagonal boron nitridecitations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Direct observation of the band structure in bulk hexagonal boron nitridecitations
- 2017Probing Charge Carrier Dynamics to Unveil the Role of Surface Ligands in HgTe Narrow Band Gap Nanocrystalscitations
- 2017Electronic structure of CdSe-ZnS 2D nanoplateletscitations
- 2016van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Propertiescitations
- 2016Band Alignment and Minigaps in Monolayer MoS 2 ‑Graphene van der Waals Heterostructurescitations
Places of action
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article
Unidirectional Rashba spin splitting in single layer WS<sub>2(1−x)</sub>Se<sub>2x</sub> alloy
Abstract
<jats:title>Abstract</jats:title><jats:p>Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS<jats:sub>1.4</jats:sub>Se<jats:sub>0.6</jats:sub> alloys. The electronic structure of this alloy, explored using angle resolved photoemission spectroscopy, shows a clear valence band structure anisotropy characterized by two paraboloids shifted in one direction of the <jats:italic>k</jats:italic>-space by a constant in-plane vector. This band splitting is a signature of a unidirectional Rashba spin splitting with a related giant Rashba parameter of 2.8 ± 0.7 eV Å. The combination of angle resolved photoemission spectroscopy with piezo force microscopy highlights the link between this giant unidirectional Rashba spin splitting and an in-plane polarization present in the alloy. These peculiar anisotropic properties of the WS<jats:sub>1.4</jats:sub>Se<jats:sub>0.6</jats:sub> alloy can be related to local atomic orders induced during the growth process due the different size and electronegativity between S and Se atoms. This distorted crystal structure combined to the observed macroscopic tensile strain, as evidenced by photoluminescence, displays electric dipoles with a strong in-plane component, as shown by piezoelectric microscopy. The interplay between semiconducting properties, in-plane spontaneous polarization and giant out-of-plane Rashba spin-splitting in this 2D material has potential for a wide range of applications in next-generation electronics, piezotronics and spintronics devices.</jats:p>