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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Sangiao, Soraya
Universidad de Zaragoza
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Polymer assisted deposition of YIG thin films with thickness control for spintronics applicationscitations
- 2023Ion-induced lateral damage in the focused ion beam patterning of topological insulator Bi2Se3 thin filmscitations
- 2022Low-resistivity, high-resolution W-C electrical contacts fabricated by direct-write focused electron beam induced depositioncitations
- 2022Low-resistivity Pd nanopatterns created by a direct electron beam irradiation process free of post-treatment stepscitations
- 2022Low-resistivity Pd nanopatterns created by a direct electron beam irradiation process free of post-treatment stepscitations
- 2022High-throughput direct writing of metallic micro- and nano-structures by focused Ga+beam irradiation of palladium acetate filmscitations
- 2022Superconducting materials and devices grown by focused ion and electron beam induced depositioncitations
- 2021Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions: application to electrical contacts on graphene, magnetism and hard maskingcitations
- 2021Omnipresence of weak antilocalization (WAL) in Bi2Se3 thin films: A review on its origincitations
- 2021Omnipresence of weak antilocalization (WAL) in Bi 2 Se 3 thin films:a review on its origincitations
- 2021Omnipresence of weak antilocalization (WAL) in Bi2Se3 thin films : a review on its origincitations
- 2021Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions : application to electrical contacts on graphene, magnetism and hard maskingcitations
- 2017Chemical solution synthesis and ferromagnetic resonance of epitaxial thin films of yttrium iron garnetcitations
- 2017All-carbon electrode molecular electronic devices based on Langmuir–Blodgett monolayerscitations
Places of action
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article
Low-resistivity Pd nanopatterns created by a direct electron beam irradiation process free of post-treatment steps
Abstract
The ability to create metallic patterned nanostructures with excellent control of size, shape and spatial orientation is of utmost importance in the construction of next-generation electronic and optical devices as well as in other applications such as (bio)sensors, reactive surfaces for catalysis, etc. Moreover, development of simple, rapid and low-cost fabrication processes of metallic patterned nanostructures is a challenging issue for the incorporation of such devices in real market applications. In this contribution, a direct-write method that results in highly conducting palladium-based nanopatterned structures without the need of applying subsequent curing processes is presented. Spin-coated films of palladium acetate were irradiated with an electron beam to produce palladium nanodeposits (PdNDs) with controlled size, shape and height. The use of different electron doses was investigated and its influence on the PdNDs features determined, namely: (1) thickness of the deposits, (2) atomic percentage of palladium content, (3) oxidation state of palladium in the deposit, (4) morphology of the sample and grain size of the Pd nanocrystals and (5) resistivity. It has been probed that the use of high electron doses, 30000 <jats:italic>μ</jats:italic>C cm<jats:sup>−2</jats:sup> results in the lowest resistivity reported to date for PdNDs, namely 145 <jats:italic>μ</jats:italic>Ω cm, which is only one order of magnitude higher than bulk palladium. This result paves the way for development of simplified lithography processes of nanostructured deposits avoiding subsequent post-treatment steps.</jats:p>