| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Coinon, Christophe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022GAP(111)B-SE Surface for TMD epitaxial growth
- 2022In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxycitations
- 2022Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral responsecitations
- 2021Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wellscitations
- 2020Engineering a Robust Flat Band in III–V Semiconductor Heterostructurescitations
- 2019InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation currentcitations
- 2018Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperaturecitations
- 2017V-shaped InAs/Al<sub>0.5</sub>Ga<sub>0.5</sub>Sb vertical tunnel FET on GaAs (001) substrate with I<sub>ON</sub>=433 µA.µm<sup>-1</sup> at V<sub>DS</sub>= 0.5Vcitations
- 2017V-shaped InAs/Al 0.5 Ga 0.5 Sb vertical tunnel FET on GaAs (001) substrate with I ON =433 µA.µm -1 at V DS = 0.5Vcitations
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article
In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy
Abstract
International audience ; In-plane InGaAs/Ga(As)Sb heterojunction tunnel diodes are fabricated by selective area molecular beam epitaxy with two different architectures: either radial InGaAs core/Ga(As)Sb shell nanowires or axial InGaAs/GaSb heterojunctions. In the former case, we unveil the impact of strain relaxation and alloy composition fluctuations at the nanoscale on the tunneling properties of the diodes, whereas in the latter case we demonstrate that template assisted molecular beam epitaxy can be used to achieve a very precise control of tunnel diodes dimensions at the nanoscale with a scalable process. In both cases, negative differential resistances with large peak current densities are achieved.