• Gajewski, Krzysztof

Abstract

<jats:title>Abstract</jats:title><jats:p>Boron doped diamond (BDD) has great potential in electrical, and electrochemical sensing applications. The growth parameters, substrates, and synthesis method play a vital role in the preparation of semiconducting BDD to metallic BDD. Doping of other elements along with boron (B) into diamond demonstrated improved efficacy of B doping and exceptional properties. In the present study, B and nitrogen (N) co-doped diamond has been synthesized on single crystalline diamond (SCD) IIa and SCD Ib substrates in a microwave plasma-assisted chemical vapor deposition process. The B/N co-doping into CVD diamond has been conducted at constant N flow of N/C ~ 0.02 with three different B/C doping concentrations of B/C ~ 2500 ppm, 5000 ppm, 7500 ppm. AFM topography depicted the flat and smooth surface with low surface roughness for low B doping, whereas surface features like hillock structures and un-epitaxial diamond crystals with high surface roughness were observed for high B doping concentrations. KPFM measurements revealed that the work function (4.74 eV to 4.94 eV) has not varied significantly for CVD diamond synthesized with different B/C concentrations. Raman spectroscopy measurements described the growth of high-quality diamond and photoluminescence studies revealed the formation of high-density nitrogen-vacancy centers in CVD diamond layers. X-ray photoelectron spectroscopy results confirmed the successful B doping and the increase in N doping with B doping concentration. The room temperature electrical resistance measurements of CVD diamond layers (B/C ~ 7500 ppm) have shown the low resistance value ~ 9.29 Ω for CVD diamond/SCD IIa, and the resistance value ~ 16.55 Ω for CVD diamond/SCD Ib samples.</jats:p>

Topics

• density
• surface
• photoluminescence
• x-ray photoelectron spectroscopy
• Nitrogen
• Boron
• Raman spectroscopy
• Kelvin probe force microscopy
• chemical vapor deposition
• vacancy