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| Naji, M. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Danescu, Alexandre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Onset of uncontrolled polytypism during the Au-catalyzed growth of wurtzite GaAs nanowirescitations
- 2023Strain generated by the stacking faults in epitaxial SrO(SrTiO 3 ) N Ruddlesden–Popper structures
- 2022III–V core / oxide shell nanowires for light–driven water splitting
- 2022Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowirescitations
- 2022Combined aberration-corrected STEM and synchrotron nano-diffraction for crystal phase engineering in GaAs nanowires
- 2021Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxycitations
- 2021Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowirescitations
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article
Wurtzite phase control for self-assisted GaAs nanowires grown by molecular beam epitaxy
Abstract
International audience ; The accurate control of the crystal phase in III-V semiconductor nanowires (NWs) is an important milestone for device applications. Although cubic zinc-blende (ZB) GaAs is a well-established material in microelectronics, the controlled growth of hexagonal wurtzite (WZ) GaAs has thus far not been achieved successfully. Specifically, the prospect of growing defect-free and gold catalyst-free wurtzite GaAs would pave the way towards integration on silicon substrate and new device applications. In this article, we present a method to select and maintain the WZ crystal phase in self-assisted NWs by molecular beam epitaxy. By choosing a specific regime where the NW growth process is a self-regulated system, the main experimental parameter to select the ZB or WZ phase is the V/III flux ratio. Using an analytical growth model, we show that the V/III flux ratio can be finely tuned by changing the As flux, thus driving the system toward a stationary regime where the wetting angle of the Ga droplet can be maintained in the range of values allowing the formation of pure WZ phase. The analysis of the in situ RHEED evolution, combined with high-resolution scanning transmission electron microscopy, dark field transmission electron microscopy, and photoluminescence all confirm the control of an extended few micrometer long pure WZ segment obtained by MBE growth of self- assisted GaAs NWs with a V/III flux ratio of 4.0. This successful controlled growth of WZ GaAs suggests potential benefits for electronics and opto-electronics applications.