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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Johansson, Jonas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024The need for nonuniform risk acceptability across climate change scenarioscitations
- 2021Improved quality of InSb-on-insulator microstructures by flash annealing into meltcitations
- 2021Surface energy driven miscibility gap suppression during nucleation of III-V ternary alloyscitations
- 2021Sintering Mechanism of Core@Shell Metal@Metal-Oxide Nanoparticlescitations
- 2021Aerotaxycitations
- 2020Pseudo-particle continuum modelling of nanowire growth in aerotaxy
- 2020Limits of III-V Nanowire Growth Based on Droplet Dynamicscitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2017Composition of Gold Alloy Seeded InGaAs Nanowires in the Nucleation Limited Regimecitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2016Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowirescitations
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2015Size- and shape-dependent phase diagram of In–Sb nano-alloyscitations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.citations
- 2011Growth of straight InAs-on-GaAs nanowire heterostructurescitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2010Control of III-V nanowire crystal structure by growth parameter tuningcitations
- 2009Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowirescitations
- 2008Effects of growth conditions on the crystal structure of gold-seeded GaP nanowirescitations
- 2008Focused ion beam fabrication of novel core-shell nanowire structurescitations
Places of action
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article
Aerotaxy
Abstract
<p>Cost- and resource-efficient growth is necessary for many applications of semiconductor nanowires. We here present the design, operational details and theory behind Aerotaxy, a scalable alternative technology for producing quality crystalline nanowires at a remarkably high growth rate and throughput. Using size-controlled Au seed particles and organometallic precursors, Aerotaxy can produce nanowires with perfect crystallinity and controllable dimensions, and the method is suitable to meet industrial production requirements. In this report, we explain why Aerotaxy is an efficient method for fabricating semiconductor nanowires and explain the technical aspects of our custom-built Aerotaxy system. Investigations using SEM (scanning electron microscope), TEM (transmission electron microscope) and other characterization methods are used to support the claim that Aerotaxy is indeed a scalable method capable of producing nanowires with reproducible properties. We have investigated both binary and ternary III-V semiconductor material systems like GaAs and GaAsP. In addition, common aspects of Aerotaxy nanowires deduced from experimental observations are used to validate the Aerotaxy growth model, based on a computational flow dynamics (CFD) approach. We compare the experimental results with the model behaviour to better understand Aerotaxy growth.</p>