Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2024Intrinsic and extrinsic relaxation mechanisms for controlling spin current intensity in Fe 100-x Co x /bilayerscitations
  • 2020Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic–photonic circuits5citations
  • 2017Intrinsic and extrinsic relaxation mechanisms for controlling spin current intensity in Fe100− x Cox/Ta bilayerscitations

Places of action

Chart of shared publication
Martínez, A. A. Pérez
1 / 1 shared
Aguirre, Myriam Haydee
1 / 11 shared
Rojassánchez, J. C.
1 / 1 shared
Goijman, D.
2 / 3 shared
Morbidel, Leonardo
1 / 1 shared
Torres, T. E.
1 / 3 shared
Milano, Julián
1 / 1 shared
Velázquez Rodriguez, Daniel
1 / 1 shared
Gómez, J. E.
1 / 1 shared
Torres, J. L. Ampuero
1 / 1 shared
Chavent, A.
1 / 1 shared
Prejbeanu, I.
1 / 2 shared
Rubio-Roy, Miguel
1 / 4 shared
Sousa, Ricardo C.
1 / 2 shared
Olivier, A.
1 / 2 shared
Auffret, S.
1 / 14 shared
Álvaro-Goémez, L.
1 / 1 shared
Vila, L.
1 / 17 shared
Dieny, B.
1 / 10 shared
Torres, T., E.
1 / 1 shared
Ampuero Torres, J., L.
1 / 1 shared
Butera, A.
1 / 3 shared
Morbidel, L.
1 / 2 shared
Gómez, J., E.
1 / 1 shared
Milano, J.
1 / 7 shared
Velázquez Rodriguez, D.
1 / 1 shared
Pérez Martínez, A., A.
1 / 1 shared
Aguirre, M., H.
1 / 1 shared
Rojas Sánchez, J., C.
1 / 1 shared
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2024
2020
2017

Co-Authors (by relevance)

  • Martínez, A. A. Pérez
  • Aguirre, Myriam Haydee
  • Rojassánchez, J. C.
  • Goijman, D.
  • Morbidel, Leonardo
  • Torres, T. E.
  • Milano, Julián
  • Velázquez Rodriguez, Daniel
  • Gómez, J. E.
  • Torres, J. L. Ampuero
  • Chavent, A.
  • Prejbeanu, I.
  • Rubio-Roy, Miguel
  • Sousa, Ricardo C.
  • Olivier, A.
  • Auffret, S.
  • Álvaro-Goémez, L.
  • Vila, L.
  • Dieny, B.
  • Torres, T., E.
  • Ampuero Torres, J., L.
  • Butera, A.
  • Morbidel, L.
  • Gómez, J., E.
  • Milano, J.
  • Velázquez Rodriguez, D.
  • Pérez Martínez, A., A.
  • Aguirre, M., H.
  • Rojas Sánchez, J., C.
OrganizationsLocationPeople

article

Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic–photonic circuits

  • Avilés-Félix, L.
  • Chavent, A.
  • Prejbeanu, I.
  • Rubio-Roy, Miguel
  • Sousa, Ricardo C.
  • Olivier, A.
  • Auffret, S.
  • Álvaro-Goémez, L.
  • Vila, L.
  • Dieny, B.
Abstract

The all-optical magnetization reversal of magnetic layers, by picosecond optical pulses, is of particular interest as it shows the potential for energy-efficient and fast magnetic tunnel junction (MTJ) elements. This approach requires memory elements that are optically and electronically accessible, for optical writing and electronic read-out In this paper, we propose the integration of indium tin oxide (ITO) as a transparent conducting electrode for magnetic tunnel junctions in integrated spintronic-photonic circuits. To provide light with sufficient energy to the MTJ free layer and allow electrical read-out of the MTJ state, we successfully integrated indium tin oxide as a top transparent electrode. The study shows that ITO film deposition by physical vapor deposition with conditions such as high source power and low O 2 flow achieves smooth and conductive thin films. Increases in grain size was associated with low resistivity. Deposition of 150 nm ITO at 300 W, O 2 flow of 1 sccm and 8.10 −3 mbar vacuum pressure results in 4.8×10 −4 Ω.cm resistivity and up to 80% transmittance at 800 nm wavelength. The patterning of ITO using CH 4 /H 2 chemistry in a reactive ion etch process was investigated showing almost vertical sidewalls for diameters down to 50 nm. The ITO based process flow was compared to a standard magnetic tunnel junctions fabrication process flow based on Ta hard mask. Electrical measurements validate that the proposed process based on ITO results in properties equivalent to the standard process. We also show electrical results of magnetic tunnel junctions having all-optical switching top electrode fabricated with ITO for optical access. The developed ITO process flow shows very promising initial results and provides a way to fabricate these new devices to integrate all-optical switching magnetic tunnel junctions with electronic and photonic elements.

Topics
  • impedance spectroscopy
  • grain
  • resistivity
  • grain size
  • thin film
  • reactive
  • physical vapor deposition
  • tin
  • magnetization
  • Indium