| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Imtyazuddin, Mohammed
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (2/2 displayed)
Places of action
| Organizations | Location | People |
|---|
article
Effect of aluminium concentration on phase formation and radiation stability of Cr2Al x C thin film
Abstract
Near-stoichiometric and under-stoichiometric Cr2Al x C (x = 0.9 and 0.75) amorphous compositions were deposited onto a silicon substrate at 330 K in a layer-by-layer fashion using magnetron sputtering from elemental targets. The film thickness was found to be 0.9 µm and 1.2 µm for the near- and under-stoichiometric compositions respectively. A transmission electron microscope (TEM) heating holder was used to heat thin sample lamellae prepared using focused ion beam milling. Near-stoichiometric Cr2AlC thin films consisted of nano MAX phase after crystallization at 873 K. Under-stoichiometric Cr2Al x C (x = 0.75) thin films contained MAX phase along with nanocrystalline chromium aluminides after crystallization at 973 K. Irradiations with 320 keV xenon ions was performed at 623 K using a TEM with an in-situ ion irradiation (MIAMI) facility. Nanocrystalline films of near-stoichiometric Cr2AlC irradiated up to 83 displacements per atom (dpa) showed no observable changes. Also, irradiation of under-stoichiometric nanocrystalline thin films up to 138 dpa did not show any observable amorphization, and recrystallization was observed. This radiation resistance of near- and under-stoichiometric thin films is attributed to the known self-healing property of Cr2Al x C compositions further enhanced by nanocrystallinity.