| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mir, Anamul Haq Jeri
University of Huddersfield
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2021Nanostructuring Germanium Nanowires by In Situ TEM Ion Irradiationcitations
- 2020Effect of aluminium concentration on phase formation and radiation stability of Cr2Al x C thin filmcitations
- 2019Direct Comparison of Tungsten Nanoparticles and Foils under Helium Irradiation at High Temperatures Studied via In-Situ Transmission Electron Microscopy
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article
Effect of aluminium concentration on phase formation and radiation stability of Cr2Al x C thin film
Abstract
Near-stoichiometric and under-stoichiometric Cr2Al x C (x = 0.9 and 0.75) amorphous compositions were deposited onto a silicon substrate at 330 K in a layer-by-layer fashion using magnetron sputtering from elemental targets. The film thickness was found to be 0.9 µm and 1.2 µm for the near- and under-stoichiometric compositions respectively. A transmission electron microscope (TEM) heating holder was used to heat thin sample lamellae prepared using focused ion beam milling. Near-stoichiometric Cr2AlC thin films consisted of nano MAX phase after crystallization at 873 K. Under-stoichiometric Cr2Al x C (x = 0.75) thin films contained MAX phase along with nanocrystalline chromium aluminides after crystallization at 973 K. Irradiations with 320 keV xenon ions was performed at 623 K using a TEM with an in-situ ion irradiation (MIAMI) facility. Nanocrystalline films of near-stoichiometric Cr2AlC irradiated up to 83 displacements per atom (dpa) showed no observable changes. Also, irradiation of under-stoichiometric nanocrystalline thin films up to 138 dpa did not show any observable amorphization, and recrystallization was observed. This radiation resistance of near- and under-stoichiometric thin films is attributed to the known self-healing property of Cr2Al x C compositions further enhanced by nanocrystallinity.