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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Aradi, Emily
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Topics
Publications (9/9 displayed)
- 2020Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiationcitations
- 2020Low-temperature investigations of ion-induced amorphisation in silicon carbide nanowhiskers under helium irradiationcitations
- 2020Effect of aluminium concentration on phase formation and radiation stability of Cr2Al x C thin filmcitations
- 2020The effect of flux on ion irradiation-enhanced precipitation in AISI-316L: an in-situ TEM studycitations
- 2020Anomalous behaviour of surface Brillouin scattering in thin strained CVD diamondcitations
- 2020Radiation Damage Suppression in AISI-316 Steel Nanoparticles: Implications for the Design of Future Nuclear Materialscitations
- 2019Investigating Helium Bubble Nucleation and Growth through Simultaneous In-Situ Cryogenic, Ion Implantation, and Environmental Transmission Electron Microscopycitations
- 2019Direct Comparison of Tungsten Nanoparticles and Foils under Helium Irradiation at High Temperatures Studied via In-Situ Transmission Electron Microscopy
- 2018Enhanced radiation tolerance of tungsten nanoparticles to He ion irradiationcitations
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article
Effect of aluminium concentration on phase formation and radiation stability of Cr2Al x C thin film
Abstract
Near-stoichiometric and under-stoichiometric Cr2Al x C (x = 0.9 and 0.75) amorphous compositions were deposited onto a silicon substrate at 330 K in a layer-by-layer fashion using magnetron sputtering from elemental targets. The film thickness was found to be 0.9 µm and 1.2 µm for the near- and under-stoichiometric compositions respectively. A transmission electron microscope (TEM) heating holder was used to heat thin sample lamellae prepared using focused ion beam milling. Near-stoichiometric Cr2AlC thin films consisted of nano MAX phase after crystallization at 873 K. Under-stoichiometric Cr2Al x C (x = 0.75) thin films contained MAX phase along with nanocrystalline chromium aluminides after crystallization at 973 K. Irradiations with 320 keV xenon ions was performed at 623 K using a TEM with an in-situ ion irradiation (MIAMI) facility. Nanocrystalline films of near-stoichiometric Cr2AlC irradiated up to 83 displacements per atom (dpa) showed no observable changes. Also, irradiation of under-stoichiometric nanocrystalline thin films up to 138 dpa did not show any observable amorphization, and recrystallization was observed. This radiation resistance of near- and under-stoichiometric thin films is attributed to the known self-healing property of Cr2Al x C compositions further enhanced by nanocrystallinity.