| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Harmand, Jean-Christophe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Selective Area Growth of GaN μ-Platelets on Graphene
- 2023A systematic study of spin-dependent recombination in GaAs1-xNx as a function of nitrogen contentcitations
- 2022Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime ; Statistiques de nucléation et croissance des monocouches individuelles dans un nanofil : Vers un régime déterministecitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Growth Dynamics of Gallium Nanodroplets Driven by Thermally Activated Surface Diffusioncitations
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2016Photon Cascade from a Single Crystal Phase Nanowire Quantum Dotcitations
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article
Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls
Abstract
The surface morphology of III-V semiconductor nanowires (NWs) protected by an arsenic cap and subsequently evaporated in ultrahigh vacuum is investigated with scanning tunneling microscopy and scanning transmission electron microscopy. We show that the changes of the surface morphology as a function of the NW composition and the nature of the seed particles are intimately related to the formation and reaction of surface point defects. Langmuir evaporation close to the congruent evaporation temperature causes the formation of vacancies which nucleate and form vacancy islands on {110} sidewalls of self-catalyzed InAs NWs. However, for annealing temperatures much smaller than the congruent temperature, a new phenomenon occurs: group III vacancies form and are filled by excess As atoms, leading to surface As Ga antisites. The resulting Ga adatoms nucleate with excess As atoms at the NW edges, producing monoatomic-step islands on the {110} sidewalls of GaAs NWs. Finally, when gold atoms diffuse from the seed particle onto the {110} sidewalls during evaporation of the protective As cap, Langmuir evaporation does not take place, leaving the sidewalls of InAsSb NWs atomically flat.