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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vos, Maarten
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2020Elucidating the capability of electron backscattering for 3D nano-structure determinationcitations
- 2020The effect of ion implantation on reflection electron energy loss spectroscopycitations
- 2019Characterization of oxygen self-diffusion in TiO2 resistive-switching layers by nuclear reaction profilingcitations
- 2018Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantationcitations
- 2018Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantationcitations
- 2018The influence of shallow core levels on the shape of REELS spectracitations
- 2016A model dielectric function for low and very high momentum transfercitations
- 2016Measurement of the band gap by reflection electron energy loss spectroscopycitations
- 2015Energy Loss Function of Solids Assessed by Ion Beam Energy-Loss Measurements: Practical Application to Ta2O5citations
- 2015Energy Loss Function of Solids Assessed by Ion Beam Energy-Loss Measurementscitations
- 2015Neutralization and wake effects on the Coulomb explosion of swift H2+ ions traversing thin filmscitations
- 2014Direct observation of the major components of mouse bones and related compounds by electron Rutherford backscattering spectroscopy
- 2014The use of electron Rutherford backscattering to characterize novel electronic materials as illustrated by a case study of sputter-deposited NbOx filmscitations
- 2010Experimental observation of the strong influence of crystal orientation on Electron Rutherford Backscattering Spectracitations
- 2007Electron inelastic mean free path in solids as determined by electron Rutherford back-scatteringcitations
- 2007Metal interface formation studied by high-energy reflection energy loss spectroscopy and electron Rutherford backscatteringcitations
- 2005Spectral momentum densities of vanadium and vanadium oxide as measured by high energy (e, 2e) spectroscopycitations
- 2005Electron and neutron scattering from polymer films at high momentum transfercitations
Places of action
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article
Room temperature synthesis of HfO2/HfO x heterostructures by ion-implantation
Abstract
<p>Implantation of Hf films with oxygen ions is shown to be an effective means of fabricating high-quality HfO<sub>2</sub>/HfO <sub>x</sub> heterostructures at room temperature, with the layer composition and thicknesses determined by the ion energy and fluence. Implantation with 3 keV O<sup>+</sup> ions to a fluence of 1 × 10<sup>17</sup> ions cm<sup>-2</sup> produces a polycrystalline (monoclinic-) HfO<sub>2</sub> layer extending from the surface to a depth of ∼12 nm, and an underlying graded HfO <sub>x</sub> layer extending an additional ∼7 nm, while implantation with 6 keV O to a similar fluence produces a near-stoichiometric surface layer of 7 nm thickness and a graded substoichiometric layer extending to depth of ∼30 nm. These structures are shown to be broadly consistent with oxygen range data but more detailed comparison with dynamic Monte Carlo simulations suggests that the near-surface region contains more oxygen than expected from collisional processes alone. The bandgap and dielectric strength of the HfO<sub>2</sub> layer produced by 3 keV; 1 × 10<sup>17</sup> ions cm<sup>-2</sup> implant is shown to be indistinguishable from those of an amorphous film deposited by atomic layer deposition at 200 °C. The utility of these layers is demonstrated by studying the resistive switching properties of metal-oxide-metal test structures fabricated by depositing a top metal contact on the implanted film. These results demonstrate the suitability of ion-implantation for the synthesis of functional oxide layers at room temperature.</p>