| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pochet, Pascal
CEA Grenoble
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022200 mm-scale growth of 2D layered GaSe with preferential orientationcitations
- 2022Microstructure of Methylammonium Lead iodide Perovskite Thin Films: A Comprehensive Study of the Strain and Texture (Adv. Energy Mater. 19/2022)citations
- 2022Microstructure of Methylammonium Lead iodide Perovskite Thin Films: A Comprehensive Study of the Strain and Texturecitations
- 2021Passivation mechanism in CdTe solar cells: The hybrid role of Secitations
- 2021Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxidecitations
- 2021Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxidecitations
- 2020Flowered graphene: Growth, charge and thermal transport
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2018Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayercitations
- 2016Toward the III-V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)citations
- 2015An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in siliconcitations
Places of action
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article
Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe 2 monolayer
Abstract
In this work, we study growth and migration of atomic defects in MoSe 2 on graphene using multiple advanced transmission electron microscopy techniques to explore defect behavior in vdW heterostructures. A MoSe 2 /graphene vdW heterostructure is prepared by a direct growth of both monolayers, thereby attaining an ideal vdW interface between the monolayers. We investigate the intrinsic defects (inversion domains and grain boundaries) in synthesized MoSe 2 , their evolution amid growth processing steps, and their influence on the formation and movement of extrinsic defects. Electron diffraction identifies a preferential interlayer orientation of 2° between MoSe 2 and graphene, which is caused by the presence of intrinsic IBD defects. Extrinsic defects (point and line defects) are generated by in situ electron irradiation in the MoSe 2 layer. Our results shed light on how to independently modify the MoSe 2 atomic structure in vdW heterostructures for potential utilization in device processing.