| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hughes, Mark A.
University of Salford
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2018High speed chalcogenide glass electrochemical metallization cells with various active metalscitations
- 2014Optical and electronic properties of bismuth-implanted glassescitations
- 2014n-type chalcogenides by ion implantationcitations
- 2014n-type chalcogenides by ion implantation.citations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glasses ; Analogie mezi fotoluminescencí a změnou typu vodivosti v Bi- a Pb-dotovaných sklechcitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi- and Pb-doped glassescitations
- 2013On the analogy between photoluminescence and carrier-type reversal in Bi-and Pb-doped glassescitations
- 2012Direct laser writing of relief diffraction gratings into a bulk chalcogenide glasscitations
- 2011Determination of the oxidation state and coordination of a vanadium doped chalcogenide glasscitations
- 2010The efficiencies of energy transfer from Cr to Nd ions in silicate glassescitations
- 2009Spectral broadening in femtosecond laser written waveguides in chalcogenide glasscitations
- 2009Ultrabroad emission from a bismuth doped chalcogenide glasscitations
- 2007Fabrication and characterization of femtosecond laser written waveguides in chalcogenide glasscitations
- 2007Concentration dependence of the fluorescence decay profile in transition metal doped chalcogenide glasscitations
- 2007Modified chalcogenide glasses for optical device applications
Places of action
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article
High speed chalcogenide glass electrochemical metallization cells with various active metals
Abstract
We fabricated electrochemical metallization cells using a GaLaSO solid electrolyte, an InSnO inactive electrode and active electrodes consisting of various metals (Cu, Ag, Fe, Cu, Mo, Al). Devices with Ag and Cu active metals showed consistent and repeatable resistive switching behaviour, and had a retention of 3 and >43 days, respectively; both had switching speeds of <5 ns. Devices with Cr and Fe active metals displayed incomplete or intermittent resistive switching, and devices with Mo and Al active electrodes displayed no resistive switching ability. Deeper penetration of the active metal into the GaLaSO layer resulted in greater resistive switching ability of the cell. The off-state resistivity was greater for more reactive active metals which may be due to a thicker intermediate layer.