| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Deppert, Knut
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2023Insights into the Synthesis Mechanisms of Ag-Cu3P-GaP Multicomponent Nanoparticlescitations
- 2021Dynamic Processes in Metal-Semiconductor Nanoparticle Heterostructures
- 2021Sintering Mechanism of Core@Shell Metal@Metal-Oxide Nanoparticlescitations
- 2021Aerotaxycitations
- 2021Synthesis and characterization of Au@Zn core@shell aerosol nanoparticles generated by spark ablation and on-line PVD
- 2020Pseudo-particle continuum modelling of nanowire growth in aerotaxy
- 2020Complex Aerosol Nanostructures: Revealing the Phases from Multivariate Analysis on Elemental Maps Obtained by TEM-EDX
- 2018N-type doping and morphology of GaAs nanowires in Aerotaxycitations
- 2017From plasma to nanoparticlescitations
- 2016GaAsP Nanowires Grown by Aerotaxycitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2015In-situ characterization of metal nanoparticles and their organic coatings using laser-vaporization aerosol mass spectrometrycitations
- 2015Surface morphology of Au-free grown nanowires after native oxide removal.citations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Dynamics of extremely anisotropic etching of InP nanowires by HClcitations
- 2011Crystal structure control in Au-free self-seeded InSb wire growth.citations
- 2011Crystal structure control in Au-free self-seeded InSb wire growth.citations
- 2011Oxidation and reduction of Pd(100) and aerosol-deposited Pd nanoparticlescitations
- 2010High Performance Single Nanowire Tunnel Diodes
- 2010Control of III-V nanowire crystal structure by growth parameter tuningcitations
- 2009Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowirescitations
- 2008Effects of growth conditions on the crystal structure of gold-seeded GaP nanowirescitations
- 2008Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.citations
- 2008High Quality InAs/InSb nanowire heterostructrues grown by metalorganic vapour phase epitaxycitations
- 2007Directed growth of branched nanowire structures
- 2007Targeted deposition of Au aerosol nanoparticles on vertical nanowires for the creation of nanotreescitations
- 2006Growth and characterization of defect free GaAs nanowirescitations
- 2006Crystal structure of branched epitaxial III-V nanotreescitations
- 2005A new understanding of au-assisted growth of III-V semiconductor nanowirescitations
- 2005Role of the Au/III-V interaction in the Au-assisted growth of III-V branched nanostructurescitations
- 2004Growth of GaP nanotree structures by sequential seeding of 1D nanowirescitations
- 2004Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth studycitations
- 2003Deposition of aerosol nanoparticles on flat substrate surfacescitations
- 2002One-dimensional heterostructures in semiconductor nanowhiskerscitations
- 2002Approaches to increasing yield in evaporation/condensation nanoparticle generationcitations
- 2002One-dimensional steeplechase for electrons realizedcitations
- 2002Heterointerfaces in III-V semiconductor nanowhiskers
- 2002Size- and composition controlled Au-In nanoalloy aerosol particles
- 2000Single-crystalline tungsten nanoparticles produced by thermal decomposition of tungsten hexacarbonylcitations
Places of action
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article
N-type doping and morphology of GaAs nanowires in Aerotaxy
Abstract
Controlled doping in semiconductor nanowires modifies their electrical and optical properties, which are important for high efficiency optoelectronic devices. We have grown n-type (Sn) doped GaAs nanowires in Aerotaxy, a new continuous gas phase mass production technique. The morphology of Sn doped nanowires is found to be a strong function of dopant, tetraethyltin to trimethylgallium flow ratio, Au-Ga-Sn alloying, and nanowire growth temperatures. High temperature and high flow ratios result in low morphological quality nanowires and in parasitic growth on the wire base and surface. Alloying and growth temperatures of 400 °C and 530 °C, respectively, resulted in good morphological quality nanowires for a flow ratio of TESn to TMGa up to 2.25 ×10-3. The wires are pure zinc-blende for all investigated growth conditions, whereas nanowires grown by metal-organic vapor phase epitaxy with the same growth conditions are usually mainly Wurtzite. The growth rate of the doped wires is found to be dependent more on the TESn flow fraction than on alloying and nanowire growth temperatures. Our photoluminescence measurements, supported by four-point probe resistivity measurements, reveal that the carrier concentration in the doped wires varies only slightly (1-3) ×1019 cm-3 with TESn flow fraction and both alloying and growth temperatures, indicating that good morphological quality wires with high carrier density can be grown with low TESn flow. Carrier concentrations lower than 1019 cm-3 can be grown by further reducing the flow fraction of TESn, which may give better morphology wires.