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Lin, Chun Chieh
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article
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
Abstract
<p>We explore the use of cubic-zinc peroxide (ZnO<sub>2</sub>) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO<sub>2</sub> was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO<sub>2</sub> layer provides a sufficient resistivity to the Cu/ZnO<sub>2</sub>/ZnO/ITO devices. The high resistivity of ZnO<sub>2</sub> encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10<sup>4</sup> s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.</p>