| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tseng, Tseung-Yuen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Flower-like nanosheets FeCo2O4 for application in supercapacitor and dye-sensitized solar cellcitations
- 2021Synaptic behaviour of TiO x/HfO2RRAM enhanced by inserting ultrathin Al2O3layer for neuromorphic computingcitations
- 2021Transformation of digital to analog switching in TaO x -based memristor device for neuromorphic applicationscitations
- 2021Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applicationscitations
- 2020Facile and One-Step in Situ Synthesis of Pure Phase Mesoporous Li2MnSiO4/CNTs Nanocomposite for Hybrid Supercapacitorscitations
- 2020The synergistic effect of iron cobaltite compare to its single oxides as cathode in supercapacitorcitations
- 2020Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memorycitations
- 2019Synthesis of Free-Standing Flexible rGO/MWCNT Films for Symmetric Supercapacitor Applicationcitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO 2 -based resistive switching random access memory devicescitations
- 2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicescitations
- 2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layercitations
- 2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellcitations
- 2017Ternary Au/ZnO/rGO nanocomposites electrodes for high performance electrochemical storage devicescitations
- 2014Forming-free bipolar resistive switching in nonstoichiometric ceria filmscitations
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article
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
Abstract
<p>We explore the use of cubic-zinc peroxide (ZnO<sub>2</sub>) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO<sub>2</sub> was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO<sub>2</sub> layer provides a sufficient resistivity to the Cu/ZnO<sub>2</sub>/ZnO/ITO devices. The high resistivity of ZnO<sub>2</sub> encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 10<sup>4</sup> s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.</p>