| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lysevych, Mykhaylo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Core-shell GaN/AlGaN nanowires grown by selective area epitaxycitations
- 2022Nonpolar Al xGa1−xN/Al yGa1−yN multiple quantum wells on GaN nanowire for UV emissioncitations
- 2022Far-Field Polarization Engineering from Nonlinear Nanoresonatorscitations
- 2022Selective Area Growth of GaN Nanowirecitations
- 2021Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contactcitations
- 2020Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennascitations
- 2019Second-harmonic generation in (111) gallium arsenide nanoantennas
- 2019 Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells citations
- 2019InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splittingcitations
- 2019Ultrathin Ta2O5 electron-selective contacts for high efficiency InP solar cellscitations
- 2018Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layercitations
- 2017Improved photoelectrochemical performance of GaN nanopillar photoanodescitations
- 2017Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloyscitations
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article
Improved photoelectrochemical performance of GaN nanopillar photoanodes
Abstract
<p>In this work, we report on the photoelectrochemical (PEC) investigation of n-GaN nanopillar (NP) photoanodes fabricated using metal organic chemical vapour deposition and the top-down approach. Substantial improvement in photocurrents is observed for GaN NP photoanodes compared to their planar counterparts. The role of carrier concentration and NP dimensions on the PEC performance of NP photoanodes is further elucidated. Photocurrent density is almost doubled for doped NP photoanodes whereas no improvement is noticed for undoped NP photoanodes. While the diameter of GaN NP is found to influence the onset potential, carrier concentration is found to affect both the onset and overpotential of the electrodes. Optical and electrochemical impedance spectroscopy characterisations are utilised to further explain the PEC results of NP photoanodes. Finally, improvement in the photostability of NP photoanodes with the addition of NiO as a co-catalyst is investigated.</p>