| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Paturi, Petriina
University of Turku
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Polycrystalline silicon, a molecular dynamics study : I. Deposition and growth modescitations
- 2024Polycrystalline silicon, a molecular dynamics study: Part I --- Deposition and growth modescitations
- 2024Integration Of Solution‐Processed BaTiO<sub>3</sub> Thin Films with High Pockels Coefficient on Photonic Platformscitations
- 2024Polycrystalline silicon, a molecular dynamics study: Part II --- Grains, grain boundaries and their structurecitations
- 2024Integration of solution‐processed BaTiO3 thin films with high pockels coefficient on photonic platformscitations
- 2023Interactions between Iron and Nickel in Fe-Ni Nanoparticles on Y Zeolite for Co-Processing of Fossil Feedstock with Lignin-Derived Isoeugenolcitations
- 2023Controlled BZO nanorod growth and improved flux pinning in YBCO films grown on vicinal STO substratescitations
- 2022Optimized BaZrO3 nanorod density in YBa2Cu3O6+x matrix for high field applicationscitations
- 2022Superconducting HfO2-added solution-derived YBa2Cu3O7 nanocomposite films : the effect of colloidal nanocrystal shape and crystallinity on pinning mechanismcitations
- 2022Strongly enhanced growth of high-temperature superconducting films on an advanced metallic templatecitations
- 2021Detection of X‐Ray Doses with Color‐Changing Hackmanites: Mechanism and Applicationcitations
- 2020High critical current density and enhanced pinning in superconducting films of YBa2Cu3O7-δ nanocomposites with embedded BaZrO3, BaHfO3, BaTiO3, and SrZrO3 nanocrystalscitations
- 2017Effect of Partial Crystallization on the Structural and Luminescence Properties of Er3+-Doped Phosphate Glassescitations
- 2017Effect of Partial Crystallization on the Structural and Luminescence Properties of Er3$-Doped Phosphate Glassescitations
- 2015Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films
- 2015Influence of SrF 2 on the Formation, Microstructure and Critical Temperature of (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O 10 Polycrystalline Samplescitations
- 2015Influence of SrF2 on the Formation, Microstructure and Critical Temperature of (Bi,Pb)2Sr2Ca2Cu3O10 Polycrystalline Samplescitations
- 2015Epitaxially Textured Pr0.6Ca0.4MnO3 Thin Films Under Considerably Low Substrate Temperaturecitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7 Sr 0.3 MnO 3 thin filmscitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin filmscitations
Places of action
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article
Polycrystalline silicon, a molecular dynamics study: Part II --- Grains, grain boundaries and their structure
Abstract
<jats:title>Abstract</jats:title><jats:p>Polysilicon (Poly-Si) is an excellent material for use in microelectronic devices, both in electrical and mechanical applications. Its mechanical and electrical properties are widely adjustable, its processing technology is compatible with existing microcircuit manufacturing technology, and its availability and recyclability are at a high level. Here, we focus on investigating the properties of poly-Si that distinguish it from other forms of silicon, that is, grains, grain boundaries, and the conditions and treatments that determine grain and grain boundary properties. Starting from the molecular dynamics simulations of the deposition of thin poly-Si films under different growth conditions we study the properties of the films, grains, and grain boundaries as a function of growth time, growth temperature, and post-annealing. We aim to get data and information that will form the essential basis for future research on the electrical properties of poly-Si.&#xD;&#xD;The main results are: (i) the effect of post-annealing on the distribution of the grain size and grain boundary thickness (ii) the distribution of the grain orientations, and (iii) the density of the 3- and 5-bonded atoms as a function of deposition temperature.</jats:p>