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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kuronen, Antti
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Dependence between glass transition and plasticity in amorphous aluminum oxide : A molecular dynamics studycitations
- 2024Polycrystalline silicon, a molecular dynamics study : I. Deposition and growth modescitations
- 2024Polycrystalline silicon, a molecular dynamics study: Part I --- Deposition and growth modescitations
- 2024Dependence between glass transition and plasticity in amorphous aluminum oxidecitations
- 2024Effect of radiation defects on the early stages of nanoindentation tests in bcc Fe and Fe-Cr alloyscitations
- 2024Polycrystalline silicon, a molecular dynamics study: Part II --- Grains, grain boundaries and their structurecitations
- 2023Ultrasound-based surface sampling in immersion for mass spectrometrycitations
- 2022Identifying Regions-of-Interest and Extracting Gold from PCBs Using MHz HIFUcitations
- 2022Effect of radiation defects on the early stages of nanoindentation tests in bcc Fe and Fe-Cr alloyscitations
- 2016Interatomic Fe-H potential for irradiation and embrittlement simulationscitations
- 2015Surface segregation in chromium-doped NiCr alloy nanoparticles and its effect on their magnetic behaviorcitations
- 2015Segregation, precipitation, and alpha-alpha ' phase separation in Fe-Cr alloyscitations
- 2009From multiply twinned to fcc nanoparticles via irradiation-induced transient amorphizationcitations
- 2009Low energy cluster deposition of nanoalloyscitations
Places of action
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article
Polycrystalline silicon, a molecular dynamics study: Part I --- Deposition and growth modes
Abstract
<jats:title>Abstract</jats:title><jats:p>Polycrystalline silicon (poly-Si) significantly expands the properties of the ICT miracle material, silicon (Si). Depending on the grain size and shape as well as the grain boundary structure, the properties of poly-Si exceed what single crystal (c-Si) and amorphous (a-Si) silicon can offer, especially for radio frequency (RF) applications in microelectronics. Due to its wide range of applications and, on the one hand, its theoretically and technologically challenging microstructure, poly-Si research is the most timely. In this report, we describe how we simulate and analyse the phenomena and mechanisms that control the effect of poly-Si deposition parameters on the structure of the deposited poly-Si films using classical molecular dynamics simulations. The grain shape and size, degree of crystallinity, grain boundary structure and the stress of poly-Si films are determined depending on the growth temperature, temperature distribution in the growing film, deposition flux, flux variation and the energy transferred to the film surface due to the deposition flux.&#xD;&#xD;The main results include: (i) the dependence of the crystallinity profile of the deposited poly-Si films on the stress, temperature and the different parameters of the deposition flux, (ii) growth modes at the early stages of the deposition, (iii) interaction and stability of seed crystallites at the early stage of the deposition of poly-Si films and the transition fromthe isolated crystallite growth to the poly-Si growth, (iv) interplay of the temperature, crystallinity, crystal shape and heath conductivity of different Si phases, (v) four different stages of crystallite growth are described: nucleation, growth, disappearance and retardation.</jats:p>