| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Paturi, Petriina
University of Turku
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Polycrystalline silicon, a molecular dynamics study : I. Deposition and growth modescitations
- 2024Polycrystalline silicon, a molecular dynamics study: Part I --- Deposition and growth modescitations
- 2024Integration Of Solution‐Processed BaTiO<sub>3</sub> Thin Films with High Pockels Coefficient on Photonic Platformscitations
- 2024Polycrystalline silicon, a molecular dynamics study: Part II --- Grains, grain boundaries and their structurecitations
- 2024Integration of solution‐processed BaTiO3 thin films with high pockels coefficient on photonic platformscitations
- 2023Interactions between Iron and Nickel in Fe-Ni Nanoparticles on Y Zeolite for Co-Processing of Fossil Feedstock with Lignin-Derived Isoeugenolcitations
- 2023Controlled BZO nanorod growth and improved flux pinning in YBCO films grown on vicinal STO substratescitations
- 2022Optimized BaZrO3 nanorod density in YBa2Cu3O6+x matrix for high field applicationscitations
- 2022Superconducting HfO2-added solution-derived YBa2Cu3O7 nanocomposite films : the effect of colloidal nanocrystal shape and crystallinity on pinning mechanismcitations
- 2022Strongly enhanced growth of high-temperature superconducting films on an advanced metallic templatecitations
- 2021Detection of X‐Ray Doses with Color‐Changing Hackmanites: Mechanism and Applicationcitations
- 2020High critical current density and enhanced pinning in superconducting films of YBa2Cu3O7-δ nanocomposites with embedded BaZrO3, BaHfO3, BaTiO3, and SrZrO3 nanocrystalscitations
- 2017Effect of Partial Crystallization on the Structural and Luminescence Properties of Er3+-Doped Phosphate Glassescitations
- 2017Effect of Partial Crystallization on the Structural and Luminescence Properties of Er3$-Doped Phosphate Glassescitations
- 2015Defect induced enhanced low field magnetoresistance and photoresponse in Pr0.6Ca0.4MnO3 thin films
- 2015Influence of SrF 2 on the Formation, Microstructure and Critical Temperature of (Bi,Pb) 2 Sr 2 Ca 2 Cu 3 O 10 Polycrystalline Samplescitations
- 2015Influence of SrF2 on the Formation, Microstructure and Critical Temperature of (Bi,Pb)2Sr2Ca2Cu3O10 Polycrystalline Samplescitations
- 2015Epitaxially Textured Pr0.6Ca0.4MnO3 Thin Films Under Considerably Low Substrate Temperaturecitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7 Sr 0.3 MnO 3 thin filmscitations
- 2013Effect of strain and grain boundaries on dielectric properties in La 0.7Sr0.3MnO3 thin filmscitations
Places of action
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article
Polycrystalline silicon, a molecular dynamics study: Part I --- Deposition and growth modes
Abstract
<jats:title>Abstract</jats:title><jats:p>Polycrystalline silicon (poly-Si) significantly expands the properties of the ICT miracle material, silicon (Si). Depending on the grain size and shape as well as the grain boundary structure, the properties of poly-Si exceed what single crystal (c-Si) and amorphous (a-Si) silicon can offer, especially for radio frequency (RF) applications in microelectronics. Due to its wide range of applications and, on the one hand, its theoretically and technologically challenging microstructure, poly-Si research is the most timely. In this report, we describe how we simulate and analyse the phenomena and mechanisms that control the effect of poly-Si deposition parameters on the structure of the deposited poly-Si films using classical molecular dynamics simulations. The grain shape and size, degree of crystallinity, grain boundary structure and the stress of poly-Si films are determined depending on the growth temperature, temperature distribution in the growing film, deposition flux, flux variation and the energy transferred to the film surface due to the deposition flux.&#xD;&#xD;The main results include: (i) the dependence of the crystallinity profile of the deposited poly-Si films on the stress, temperature and the different parameters of the deposition flux, (ii) growth modes at the early stages of the deposition, (iii) interaction and stability of seed crystallites at the early stage of the deposition of poly-Si films and the transition fromthe isolated crystallite growth to the poly-Si growth, (iv) interplay of the temperature, crystallinity, crystal shape and heath conductivity of different Si phases, (v) four different stages of crystallite growth are described: nucleation, growth, disappearance and retardation.</jats:p>