| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Georgiev, Yordan M.
Helmholtz-Zentrum Dresden-Rossendorf
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2024Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopycitations
- 2023Room-temperature extended short-wave infrared GeSn photodetectors realized by ion beam techniquescitations
- 2023Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser meltingcitations
- 2022Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
- 2021Controlled Silicidation of Silicon Nanowires Using Flash Lamp Annealingcitations
- 2019Towards Reconfigurable Electronics: Silicidation of Top-Down Fabricated Silicon Nanowirescitations
- 2019Towards reconfigurable electronics: Silicidation of top-down fabricated silicon nanowirescitations
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article
Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopy
Abstract
<jats:title>Abstract</jats:title><jats:p>Direct-band-gap Germanium-Tin alloys (Ge<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic>) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic> films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening – variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic> films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.</jats:p>