| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Liedke, Maciej Oskar
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopycitations
- 2024Controlling Magneto-Ionics by Defect Engineering Through Light Ion Implantationcitations
- 2024Positron annihilation analysis of nanopores and growth mechanism of oblique angle evaporated TiO2 and SiO2 thin films and multilayers
- 2022Defect Nanostructure and its Impact on Magnetism of α-Cr2O3 thin filmscitations
- 2022Flexomagnetism and vertically graded Néel temperature of antiferromagnetic Cr2O3 thin films
- 2022Unravelling the Origin of Ultra‐Low Conductivity in SrTiO$_3$ Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinningcitations
- 2022The impact of Mn nonstoichiometry on the oxygen mass transport properties of La Sr Mn O thin filmscitations
- 2017Purely antiferromagnetic magnetoelectric random access memory
- 2005Magnetic anisotropy and domain patterning of amorphous films by He-ion irradiationcitations
Places of action
| Organizations | Location | People |
|---|
article
Evolution of point defects in pulsed-laser-melted Ge<sub>1-x </sub>Sn <sub>x</sub> probed by positron annihilation lifetime spectroscopy
Abstract
<jats:title>Abstract</jats:title><jats:p>Direct-band-gap Germanium-Tin alloys (Ge<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic>) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic> films treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening – variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic> films exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.</jats:p>