| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lauritsen, Jeppe Vang
Aarhus University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (25/25 displayed)
- 2023Atomic-Scale Site Characterization of Cu-Zn Exchange on Cu(111)citations
- 2023Steering carbon dioxide reduction toward C–C coupling using copper electrodes modified with porous molecular filmscitations
- 2023The interface of in-situ grown single-layer epitaxial MoS2 on SrTiO3(001) and (111)citations
- 2022Iron carbide formation on thin iron films grown on Cu(1 0 0)citations
- 2022WO3 Monomers Supported on Anatase TiO2(101), −(001), and Rutile TiO2(110)citations
- 2022Can the CO 2 Reduction Reaction Be Improved on Cu:Selectivity and Intrinsic Activity of Functionalized Cu Surfacescitations
- 2022Can the CO2Reduction Reaction Be Improved on Cucitations
- 2021Nanoscale Chevrel-Phase Mo6S8Prepared by a Molecular Precursor Approach for Highly Efficient Electrocatalysis of the Hydrogen Evolution Reaction in Acidic Mediacitations
- 2020Molecular Nanowire Bonding to Epitaxial Single-Layer MoS2 by an On-Surface Ullmann Coupling Reactioncitations
- 2020Cubes on a string:a series of linear coordination polymers with cubane-like nodes and dicarboxylate linkerscitations
- 2019Anisotropic iron-doping patterns in two-dimensional cobalt oxide nanoislands on Au(111)citations
- 2019Structural and electronic properties of Fe dopants in cobalt oxide nanoislands on Au(111)citations
- 2018Phase Transitions of Cobalt Oxide Bilayers on Au(111) and Pt(111)citations
- 2018Topotactic Growth of Edge-Terminated MoS 2 from MoO 2 Nanocrystalscitations
- 2018Topotactic Growth of Edge-Terminated MoS2 from MoO2 Nanocrystalscitations
- 2017Gold-supported two-dimensional cobalt oxyhydroxide (CoOOH) and multilayer cobalt oxide islandscitations
- 2017Edge reactivity and water-assisted dissociation on cobalt oxide nanoislandscitations
- 2015Electronic Structure of Epitaxial Single-Layer MoS2citations
- 2015Noncontact AFM Imaging of Atomic Defects on the Rutile TiO2 (110) Surfacecitations
- 2015Electronic structure of epitaxial single-layer MoS2citations
- 2015Synthesis of Epitaxial Single-Layer MoS2 on Au(111)citations
- 2014Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS2 on a Gold Surfacecitations
- 2014Structure and Electronic Properties of In Situ Synthesized Single-Layer MoS 2 on a Gold Surfacecitations
- 2011Atomic-scale non-contact AFM studies of alumina supported nanoparticles
- 2011Stabilization Principles for Polar Surfaces of ZnOcitations
Places of action
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article
The interface of in-situ grown single-layer epitaxial MoS2 on SrTiO3(001) and (111)
Abstract
<p>SrTiO<sub>3</sub> (STO) is a versatile substrate with a high dielectric constant, which may be used in heterostructures with 2D materials, such as MoS<sub>2</sub>, to induce interesting changes to the electronic structure. STO single crystal substrates have previously been shown to support the growth of well-defined epitaxial single-layer (SL) MoS<sub>2</sub> crystals. The STO substrate is already known to renormalize the electronic bandgap of SL MoS<sub>2</sub>, but the electronic nature of the interface and its dependence on epitaxy are still unclear. Herein, we have investigated an in-situ physical vapor deposition (PVD) method, which could eliminate the need for ambient transfer between substrate preparation, subsequent MoS<sub>2</sub> growth and surface characterization. Based on this, we then investigate the structure and epitaxial alignment of pristine SL MoS<sub>2</sub> in various surface coverages grown on two STO substrates with a different initial surface lattice, the STO(001)(4 × 2) and STO(111)-(9/5 × 9/5) reconstructed surfaces, respectively. Scanning tunneling microscopy shows that epitaxial alignment of the SL MoS<sub>2</sub> is present for both systems, reflected by orientation of MoS<sub>2</sub> edges and a distinct moiré pattern visible on the MoS<sub>2</sub>(0001) basal place. Upon increasing the SL MoS<sub>2</sub> coverage, the presence of four distinct rotational domains on the STO(001) substrate, whilst only two on STO(111), is seen to control the possibilities for the formation of coherent MoS<sub>2</sub> domains with the same orientation. The presented methodology relies on standard PVD in ultra-high vacuum and it may be extended to other systems to help explore pristine two-dimensional transition metal dichalcogenide/STO systems in general.</p>