| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Oehme, Michael
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Lateral Mn$_5$Ge$_3$ spin-valve in contact with a high-mobility Ge two-dimensional hole gas
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2024Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductorscitations
- 2023Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser meltingcitations
- 2022Two-dimensional hole gases in SiGeSn alloyscitations
- 2022Monolithic Integration of Gesn on Si for IR Camera Demonstration
- 2022Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
- 2021Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layerscitations
- 2021Formation of Mn$_{5}$Ge$_{3}$ on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronicscitations
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article
Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
Abstract
<jats:title>Abstract</jats:title><jats:p>The pseudomorphic growth of Ge<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic> on Ge causes in-plane compressive strain, which degrades the superior properties of the Ge<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic> alloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge<jats:sub>1−<jats:italic>x</jats:italic></jats:sub>Sn<jats:italic><jats:sub>x</jats:sub></jats:italic> alloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm<jats:sup>−2</jats:sup>, the Ge<jats:sub>0.89</jats:sub>Sn<jats:sub>0.11</jats:sub> layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge<jats:sub>0.89</jats:sub>Sn<jats:sub>0.11</jats:sub> layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.</jats:p>