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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Akola, Jaakko
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024Deposited PtGe clusters as active and durable catalysts for CO oxidationcitations
- 2024Graphite nucleation on (Al, Si, Mg)-nitrides : Elucidating the chemical interactions and turbostratic structures in spheroidal graphite cast ironscitations
- 2024Graphite nucleation on (Al, Si, Mg)-nitridescitations
- 2023Machine-learned model Hamiltonian and strength of spin-orbit interaction in strained Mg2X (X = Si, Ge, Sn, Pb)citations
- 2022Machine-learned model Hamiltonian and strength of spin-orbit interaction in strained Mg2X (X = Si, Ge, Sn, Pb)citations
- 2021Comparison of optical response from DFT random phase approximation and a low-energy effective modelcitations
- 2021Comparison of optical response from DFT random phase approximation and a low-energy effective model : Strained phosphorenecitations
- 2020Density functional simulations of pressurized Mg-Zn and Al-Zn alloyscitations
- 2020Strain-engineered widely tunable perfect absorption angle in black phosphorus from first principlescitations
- 2020Synergistic Computational-Experimental Discovery of Highly Selective PtCu Nanocluster Catalysts for Acetylene Semihydrogenationcitations
- 2020Atomistic simulations of early stage clusters in AlMg alloyscitations
- 2019Highly ductile amorphous oxide at room temperature and high strain ratecitations
- 2019Highly ductile amorphous oxide at room temperature and high strain ratecitations
- 2019Ultrahigh-pressure form of Si O2 glass with dense pyrite-type crystalline homologycitations
- 2019Atomistic simulations of early stage clusters in Al–Mg alloyscitations
- 2018Atomistic simulations of early stage clusters in AlMg alloyscitations
- 2016Tuning electronic properties of graphene heterostructures by amorphous-to-crystalline phase transitionscitations
- 2015Structure of amorphous Ag/Ge/S alloys: experimentally constrained density functional studycitations
- 2015The Prototype Phase Change Material Ge2Sb2Te5citations
- 2003Close packing of clusterscitations
- 2001Metallic evolution of small magnesium clusters
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article
Machine-learned model Hamiltonian and strength of spin-orbit interaction in strained Mg2X (X = Si, Ge, Sn, Pb)
Abstract
<p>Machine-learned multi-orbital tight-binding (MMTB) Hamiltonian models have been developed to describe the electronic characteristics of intermetallic compounds Mg2Si, Mg2Ge, Mg2Sn, and Mg2Pb subject to strain. The MMTB models incorporate spin-orbital mediated interactions and they are calibrated to the electronic band structures calculated via density functional theory by a massively parallelized multi-dimensional Monte-Carlo search algorithm. The results show that a machine-learned five-band tight-binding (TB) model reproduces the key aspects of the valence band structures in the entire Brillouin zone. The five-band model reveals that compressive strain localizes the contribution of the 3s orbital of Mg to the conduction bands and the outer shell p orbitals of X (X = Si, Ge, Sn, Pb) to the valence bands. In contrast, tensile strain has a reversed effect as it weakens the contribution of the 3s orbital of Mg and the outer shell p orbitals of X to the conduction bands and valence bands, respectively. The π bonding in the Mg2X compounds is negligible compared to the σ bonding components, which follow the hierarchy |σsp|>|σpp|>|σss|, and the largest variation against strain belongs to σ pp . The five-band model allows for estimating the strength of spin-orbit coupling (SOC) in Mg2X and obtaining its dependence on the atomic number of X and strain. Further, the band structure calculations demonstrate a significant band gap tuning and band splitting due to strain. A compressive strain of -10% can open a band gap at the Γ point in metallic Mg2Pb, whereas a tensile strain of +10% closes the semiconducting band gap of Mg2Si. A tensile strain of +5% removes the three-fold degeneracy of valence bands at the Γ point in semiconducting Mg2Ge. The presented MMTB models can be extended for various materials and simulations (band structure, transport, classical molecular dynamics), and the obtained results can help in designing devices made of Mg2X.</p>