| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Muller, Dominique
Laboratoire des Sciences de l'Ingénieur, de l'Informatique et de l'Imagerie
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Direct growth of highly oriented GaN thin films on silicon by remote plasma CVDcitations
- 2023Insights on CaTiS3 films grown by pulsed laser depositioncitations
- 2022Insights into Cu2O Thin Film Absorber via Pulsed Laser Depositioncitations
- 2022Preferential Location of Dopants in the Amorphous Phase of Oriented Regioregular Poly(3‐hexylthiophene‐2,5‐diyl) Films Helps Reach Charge Conductivities of 3000 S cm −1citations
- 2019UV laser annealing of Diamond-Like Carbon layers obtained by Pulsed Laser Deposition for optical and photovoltaic applicationscitations
- 2019Pure carbon conductive transparent electrodes synthetized by a full laser deposition and annealing processcitations
- 2014Ion beam synthesis of embedded III‐As nanocrystals in silicon substratecitations
- 2011Effect of annealing treatments on photoluminescence and charge storage mechanism in silicon-rich SiNx:H films
- 2011Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2stack tunnel dielectrics for memory application
Places of action
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article
Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD
Abstract
International audience ; We report on low-temperature (500 °C) and low-pressure (0.3 mbar) direct growth of GaN thin films on silicon (100) substrates using remote plasma chemical vapour deposition (RP-CVD). In the custom-designed reactor, an RF inductively coupled plasma is generated remotely from the substrate's area to facilitate the decomposition of group-V precursor, N2 with added H2, while group-III precursor trimethylgallium (TMGa), is directly injected into the growth chamber mixed with H2 carrier gas. Growth parameters such as RF power, process pressure and gas flow rates have been optimized to achieve a film growth rate of about 0.6 µm h−1. Several characterization techniques were used to investigate the plasma and the properties of the grown thin films in terms of their crystallinity, morphology, topography, and composition. The films are highly textured with a preferential orientation along the c-axis of the wurtzite structure. They present a small roughness in the nanometer range and a columnar microstructure with a grain size of one hundred nanometer, and a gallium polarity (+c plane oriented). Rutherford backscattering spectrometry and nuclear reaction analysis show that the chemical composition is homogeneous through the depth of the layer, with a III/V ratio close to 1, a very low content of oxygen (below the detection limit ∼1%) and a carbon content up to 11%. It was shown that the increase of plasma power helps to reduce this carbon contamination down to 8%. This research paves the way for a growth method compatible with cost reduction of III–V thin film production achieved through reduced gas consumption facilitated by RP-CVD operation at low pressure.