| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Pere, Roca I. Cabarrocas
Institut Photovoltaïque d’Île-de-France
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Direct growth of highly oriented GaN thin films on silicon by remote plasma CVDcitations
- 2024Nitrogen atoms absolute density measurement using two-photon absorption laser induced fluorescence in reactive magnetron discharge for gallium nitride depositioncitations
- 2024Three Terminal Organic-Silicon Tandem Models
- 2024Insights into the growth of GaN thin films through liquid gallium sputtering: A plasma-film combined analysiscitations
- 2023Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperaturecitations
- 2023Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditionscitations
- 2023Maskless patterned plasma fabrication of interdigitated back contact silicon heterojunction solar cells: characterization and optimizationcitations
- 2022Wafer-scale pulsed laser deposition of ITO for solar cells: reduced damage vs. interfacial resistancecitations
- 2020Hydrogen Plasma-Assisted Growth of Gold Nanowirescitations
- 2019Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor depositioncitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2019Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVDcitations
- 2016Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integrationcitations
- 2016Ultrathin Epitaxial Silicon Solar Cells with Inverted Nanopyramid Arrays for Efficient Light Trappingcitations
- 2014In-situ spectroscopic ellipsometry of microcrystalline silicon deposited by plasma-enhanced chemical vapor deposition on flexible Fe-Ni alloy substrate for photovoltaic applicationscitations
- 2013Multi-resonant absorption in ultra-thin silicon solar cells with metallic nanowirescitations
- 2012Amorphous silicon diamond based heterojunctions with high rectification ratiocitations
- 2012Nanopatterned front contact for broadband absorption in ultra-thin amorphous silicon solar cellscitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2012Low temperature plasma deposition of silicon thin films: From amorphous to crystallinecitations
- 2007Hybrid solar cells based on thin-film silicon and P3HTcitations
- 2002Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmascitations
Places of action
| Organizations | Location | People |
|---|
article
Direct growth of highly oriented GaN thin films on silicon by remote plasma CVD
Abstract
International audience ; We report on low-temperature (500 °C) and low-pressure (0.3 mbar) direct growth of GaN thin films on silicon (100) substrates using remote plasma chemical vapour deposition (RP-CVD). In the custom-designed reactor, an RF inductively coupled plasma is generated remotely from the substrate's area to facilitate the decomposition of group-V precursor, N2 with added H2, while group-III precursor trimethylgallium (TMGa), is directly injected into the growth chamber mixed with H2 carrier gas. Growth parameters such as RF power, process pressure and gas flow rates have been optimized to achieve a film growth rate of about 0.6 µm h−1. Several characterization techniques were used to investigate the plasma and the properties of the grown thin films in terms of their crystallinity, morphology, topography, and composition. The films are highly textured with a preferential orientation along the c-axis of the wurtzite structure. They present a small roughness in the nanometer range and a columnar microstructure with a grain size of one hundred nanometer, and a gallium polarity (+c plane oriented). Rutherford backscattering spectrometry and nuclear reaction analysis show that the chemical composition is homogeneous through the depth of the layer, with a III/V ratio close to 1, a very low content of oxygen (below the detection limit ∼1%) and a carbon content up to 11%. It was shown that the increase of plasma power helps to reduce this carbon contamination down to 8%. This research paves the way for a growth method compatible with cost reduction of III–V thin film production achieved through reduced gas consumption facilitated by RP-CVD operation at low pressure.