| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Korte, Lars
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Electron contact interlayers for low‐temperature‐processed crystalline silicon solar cellscitations
- 2023New optical dispersion models for the accurate description of the electrical permittivity in direct and indirect semiconductorscitations
- 2023Field Effect Passivation in Perovskite Solar Cells by a LiF Interlayer
- 2023Ink Design Enabling Slot‐Die Coated Perovskite Solar Cells with >22% Power Conversion Efficiency, Micro‐Modules, and 1 Year of Outdoor Performance Evaluationcitations
- 2022Monolithic perovskite/silicon tandem solar cell with >29% efficiency by enhanced hole extraction
- 2022Future of n-type PV
- 2021Interface Molecular engineering for laminated monolithic perovskite/silicon tandem solar cells with 80.4% fill factorcitations
- 2020Silicon interface passivation studied by modulated surface photovoltage spectroscopycitations
- 2018Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaicscitations
- 2017It Takes Two to Tango - Double-Layer Selective Contacts in Perovskite Solar Cells for Improved Device Performance and Reduced Hysteresiscitations
- 2017Efficient light management by textured nanoimprinted layers for perovskite solar cellscitations
- 2017It Takes Two to Tango-Double-Layer Selective Contacts in Perovskite Solar Cells for Improved Device Performance and Reduced Hysteresiscitations
- 2017ITO-free metallization for interdigitated back contact silicon heterojunction solar cells
- 2017Roadmap and roadblocks for the band gap tunability of metal halide perovskitescitations
Places of action
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article
New optical dispersion models for the accurate description of the electrical permittivity in direct and indirect semiconductors
Abstract
<jats:title>Abstract</jats:title><jats:p>We propose new optical dispersion models to describe the imaginary part of the electrical permittivity of dielectric and semiconductor materials in the fundamental absorption region. We work out our procedure based on the well-known structure of the semi-empirical Tauc–Lorentz dispersion model and the band-fluctuations approach to derive a five-parameter formula that describes the Urbach, Tauc and high-absorption regions of direct and indirect semiconductors. Main features of the dispersion models are the self-consistent generation of the exponential Urbach tail below the bandgap and the incorporation of the Lorentz oscillator behavior due to electronic transitions above the fundamental region. We apply and test these models on optical data of direct (MAPbI<jats:sub>3</jats:sub>, gallium arsenide and indium phosphide), indirect (gallium phosphide and crystalline silicon), and amorphous hydrogenated silicon semiconductors, accurately describing the spectra of the imaginary part of the electrical permittivity. Lastly, we compare our results with other similarly inspired dispersion models to assess the optical bandgap, Urbach tail and oscillator central resonance energy.</jats:p>