| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cahen, David
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Guided Search to Self-Healing in Semiconductorscitations
- 2023Guided Search to Self‐Healing in Semiconductorscitations
- 2022Steady-state optoelectronic measurements of halide perovskites on a selective contact
- 2018Self-Healing Inside APbBr3 Halide Perovskite Crystalscitations
- 2018Effect of Internal Heteroatoms on Level Alignment at Metal/Molecular Monolayer/Si Interfacescitations
- 2017New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopycitations
- 2016Valence and Conduction Band Densities of States of Metal Halide Perovskitescitations
- 2016CH3NH3PbBr3 is not pyroelectric, excluding ferroelectric-enhanced photovoltaic performancecitations
- 2013Effect of molecule-surface reaction mechanism on the electronic characteristics and photovoltaic performance of molecularly modified Sicitations
- 2012Ambient organic molecular passivation of Si yields near-ideal, Schottky-Mott limited, junctionscitations
- 2012Controlling space charge of oxide-free si by in situ modification of dipolar alkyl monolayerscitations
- 2010Hg/Molecular Monolayer-Si Junctionscitations
- 2000Frontier orbital model of semiconductor surface passivation
Places of action
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article
Steady-state optoelectronic measurements of halide perovskites on a selective contact
Abstract
Most of the charge transport properties in halide perovskite (HaP) absorbers are measured by transient measurements with pulsed excitations; however, most solar cells in real life function in steady-state conditions. In contrast to working devices that include selective contacts, steady-state measurements need as high as possible photoconductivity (sigma ph), which is typically restricted to the absorber alone. In this paper, we enabled steady-state charge transport measurement using atomic layer deposition (ALD) to grow a conformal, ultra-thin (similar to 4 nm) ZnO electron transport layer that is laterally insulating due to its thickness. Due to the highly alkaline behavior of the ZnO surfaces, it readily reacts with halide Perovskites. ALD process was used to form an Aluminum oxynitride (AlON) thin (similar to 2 nm) layer that passivates the ZnO-HaP interface. We show that the presence of the AlON layer prevents HaP degradation caused by the interaction with the ZnO layer, improves the HaP sigma ph, and doubles the HaP carrier diffusion lengths.<br />