| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cardoso, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Labeling on a Chip of Cellular Fibronectin and Matrix Metallopeptidase-9 in Human Serumcitations
- 2022Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area productcitations
- 2020Orthorhombic GdMnO<sub>3</sub> Epitaxial Thin Film Grown onto SrTiO<sub>3</sub> (110)
- 2018All-spinel oxide Josephson junctions for high-efficiency spin filtering.
- 2017Bipolar resistive switching in Si/Ag nanostructurescitations
- 2017Unipolar Nonvolatile Resistive Switching in Pt/MgO/Ta/Ru Structures Deposited by Magnetron Sputteringcitations
- 2015Characterization tests for insulation boards made from corn cob and natural glues
- 2013Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotrackscitations
- 2011Resonant Tunneling through Electronic Trapping States in Thin MgO Magnetic Junctionscitations
- 2004Peculiar magnetic and electrical properties near structural percolation in metal-insulator granular layerscitations
Places of action
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article
Seebeck effect and Joule heating in CoFeB/MgO/CoFeB-based perpendicular magnetic tunnel junctions with low resistance area product
Abstract
<jats:title>Abstract</jats:title><jats:p>Perpendicular magnetic tunnel junctions (p-MTJs) have attracted great interest due to their excellent performance in spin-transfer-torque magnetic random access memories (STT-MRAMs). Here, the resistance states can be manipulated by an applied current in the order of 10<jats:sup>9</jats:sup>–10<jats:sup>10</jats:sup> A m<jats:sup>−2</jats:sup>, yet the appearance of a heating influence must be understood. In this work, we systematically study the Seebeck effect in nano scale p-MTJs induced due to Joule heating by the tunneling current. The CoFeB/MgO/CoFeB-based p-MTJs were nanofabricated and the current-induced switching was characterized. We find a sign change of the thermovoltage (Δ<jats:italic>V</jats:italic>) between AP (positive) and P (negative) states, indicating a significant dependence of the Seebeck effect on the magnetic state of the p-MTJ. The temperature distribution in the stack was simulated, by which the Seebeck coefficient (<jats:italic>S</jats:italic>) and the tunnel magneto-Seebeck ratio were calculated. Our further study indicates that the thermal STT can reduce the switching currents, showing the possibility to re-use this dissipative heating energy. To improve the efficiency of the energy re-use, a method is proposed through the materials optimization of the non-magnetic layers but still retaining high tunneling magnetoresistance effect. Our study shows that the magneto-Seebeck effect plays an important role in the p-MTJs, which can be crucial and must be considered in the design of the high performance p-STT-MRAMs and thermal-assisted MRAMs.</jats:p>