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| Naji, M. |
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| Ertürk, Emre |
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| Azevedo, Nuno Monteiro |
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Halsall, Mp
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Publications (8/8 displayed)
- 2021Passivation of thermally-induced defects with hydrogen in float-zone siliconcitations
- 2018Graphene oxide films for field effect surface passivation of silicon for solar cellscitations
- 2018Deep-level analysis of passivation of transition metal impurities in siliconcitations
- 2013Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generationcitations
- 2013Size limit on the phosphorous doped silicon nanocrystals for dopant activationcitations
- 2010Formation of Si-nanocrystals in SiO2 via ion implantation and rapid thermal processingcitations
- 2010Structure and luminescence of rare earth-doped silicon oxides studied through their X-ray absorption near edge structure and X-ray excited optical luminescencecitations
- 2001Investigation into the deformation of carbon nanotubes and their composites through the use of Raman spectroscopycitations
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article
Passivation of thermally-induced defects with hydrogen in float-zone silicon
Abstract
<p>In this study, passivation of thermally-activated recombination centers with hydrogen in n-type float zone (FZ) Si containing nitrogen has been investigated. Prior to hydrogenation samples were heated to 550 °C using rapid thermal annealing and conventional furnaces. A large decrease in minority carrier lifetime occurred upon the heat-treatments confirming previous reports. A sequence of electron traps created in this process have been detected in the deep level transient spectra and characterized. Significant changes in the spectra have occurred after treatments in remote hydrogen plasma and subsequent annealing of the hydrogenated samples in the temperature range 100 °C-400 °C. A total elimination of electrical activity of the thermally induced defects has been observed in the hydrogenated samples subjected to annealing in the temperature range 150 °C-300 °C. The results obtained suggest a simple way for an effective cure of the degraded FZ-Si-based solar cells. Possible defect reactions occurring in the FZ-Si crystals and the role of nitrogen and carbon upon the performed treatments are discussed.</p>