| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lysevych, Mykhaylo
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2023Core-shell GaN/AlGaN nanowires grown by selective area epitaxycitations
- 2022Nonpolar Al xGa1−xN/Al yGa1−yN multiple quantum wells on GaN nanowire for UV emissioncitations
- 2022Far-Field Polarization Engineering from Nonlinear Nanoresonatorscitations
- 2022Selective Area Growth of GaN Nanowirecitations
- 2021Narrow-Bandgap InGaAsP Solar Cell with TiO2 Carrier-Selective Contactcitations
- 2020Forward and Backward Switching of Nonlinear Unidirectional Emission from GaAs Nanoantennascitations
- 2019Second-harmonic generation in (111) gallium arsenide nanoantennas
- 2019 Ultrathin Ta 2 O 5 electron-selective contacts for high efficiency InP solar cells citations
- 2019InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splittingcitations
- 2019Ultrathin Ta2O5 electron-selective contacts for high efficiency InP solar cellscitations
- 2018Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layercitations
- 2017Improved photoelectrochemical performance of GaN nanopillar photoanodescitations
- 2017Void evolution and porosity under arsenic ion irradiation in GaAs1-xSbx alloyscitations
Places of action
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article
Indium phosphide based solar cell using ultra-thin ZnO as an electron selective layer
Abstract
<p>According to the Shockley-Queisser limit, the maximum achievable efficiency for a single junction solar cell is ∼33.2% which corresponds to a bandgap (E <sub>g</sub>) of 1.35 eV (InP). However, the maximum reported efficiency for InP solar cells remain at 24.2% ± 0.5%, that is >25% below the standard Shockley-Queisser limit. Through a wide range of simulations, we propose a new device structure, ITO/ ZnO/i-InP/p<sup>+</sup> InP (p-i-ZnO-ITO) which might be able to fill this efficiency gap. Our simulation shows that the use of a thin ZnO layer improves passivation of the underlying i-InP layer and provides electron selectivity leading to significantly higher efficiency when compared to their n<sup>+</sup>/i/p<sup>+</sup> homojunction counterpart. As a proof-of-concept, we fabricated ITO/ZnO/i-InP solar cell on a p<sup>+</sup> InP substrate and achieved an open-circuit voltage (V <sub>oc</sub>) and efficiency as high as 819 mV and 18.12%, respectively, along with ∼90% internal quantum efficiency. The entire device fabrication process consists of four simple steps which are highly controllable and reproducible. This work lays the foundation for a new generation of thin film InP solar cells based solely on carrier selective heterojunctions without the requirement of extrinsic doping and can be particularly useful when p- and n-doping are challenging as in the case of III-V nanostructures.</p>