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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Balasubramaniam, K. R.
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article
High figure-of-merit p-type transparent conductor, Cu alloyed ZnS via radio frequency magnetron sputtering
Abstract
p-type transparent conducting Cu alloyed ZnS thin films from Cu<SUB>{x</SUB>} Zn<SUB>{1-x</SUB>} S targets (x = 0.1 , 0.2, 0.3, 0.4, and 0.5) were deposited on glass substrates via radio frequency sputtering. x-ray diffraction and TEM-SAED analysis show that all the films have sphalerite ZnS as the majority crystalline phase. In addition, films with 30% and 40% Cu show the presence of increasing amounts of crystalline Cu<SUB>2</SUB>S phase. Conductivity values ⩾400 S cm<SUP>-1</SUP> were obtained for the films having 30% and 40% Cu, with the maximum conductivity of 752 S cm<SUP>-1</SUP> obtained for the film with 40% Cu. Temperature dependent electrical transport measurements indicate metallic as well as degenerate hole conductivity in the deposited films. The reflection-corrected transmittance of this Cu alloyed ZnS (40% Cu) film was determined to be ⩾75% at 550 nm. The transparent conductor figure of merit (Φ<SUB>TC</SUB> ) of the Cu alloyed ZnS (40% Cu), calculated with the average value of transmittance between 1.5 to 2.5 eV, was ≈276 μS ....