| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Morgan, Katrina Anne
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023Expanding the transmission window of visible-MWIR chalcogenide glasses by silicon nitride doping
- 2023Conformal CVD-grown MoS2 on three-dimensional woodpile photonic crystals for photonic bandgap engineeringcitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2021Manufacturing of GLS-Se glass rods and structured preforms by extrusion for optical fiber drawing for the IR regioncitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019High-throughput physical vapour deposition flexible thermoelectric generatorscitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Structural modification of Ga-La-S glass for a new family of chalcogenidescitations
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memorycitations
- 2016Forming-free resistive switching of tunable ZnO films grown by atomic layer depositioncitations
- 2016Advanced CVD technology for emerging transition metal di-chalcogenides
- 2014The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devicescitations
Places of action
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article
Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memory
Abstract
We report here a ZrO2−x /ZrO2-based bilayer resistive switching memory with unique properties that enables the selection of the switching mode by applying different electroforming current compliances. Two opposite polarity modes, positive bipolar and negative bipolar, correspond to the switching in the ZrO2 and ZrO2−x layer, respectively. The ZrO2 layer is proved to be responsible for the negative bipolar mode which is also observed in a ZrO2 single layer device. The oxygen deficient ZrO2−x layer plays the dominant role in the positive bipolar mode, which is exclusive to the bilayer memory. A systematic investigation of the ZrO2−x composition in the bilayer memory suggests that ZrO1.8 layer demonstrates optimum switching performance with low switching voltage, narrow switching voltage distribution and good cycling endurance. An excess of oxygen vacancies, beyond this composition, leads to a deterioration of switching properties. The formation and dissolution of the oxygen vacancy filament model has been proposed to explain both polarity switching behaviours and the improved properties in the bilayer positive bipolar mode are attributed to the confined oxygen vacancy filament size within the ZrO2−x layer.