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Antoszewski, Jaroslaw
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2022Narrow bandgap HgCdTe technology for IR sensing & imaging focal plane arrayscitations
- 2019Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applicationscitations
- 2018GaSb-based II-VI semiconductors for application in next generation infrared detectors
- 2018Optimization of Superlattice Barrier HgCdTe nBn Infrared Photodetectors Based on an NEGF Approachcitations
- 2017Large-Area MEMS Tunable Fabry-Perot Filters for Multi/Hyperspectral Infrared Imagingcitations
- 2016Superlattice Barrier HgCdTe nBn Infrared Photodetectorscitations
- 2015Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivationcitations
- 2014GaSb: A new alternative substrate for epitaxial growth of HgCdTecitations
- 2009Third-generation infrared photodetector arrayscitations
- 2007Dielectric thin films for MEMS-based optical sensorscitations
- 2006Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin filmscitations
- 2004Laser-Beam-Induced Current Mapping of Spatial Nonuniformities in Molecular Beam Epitaxy As-Grown HgCdTecitations
- 2004Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodescitations
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article
Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films
Abstract
Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiNx thin films: one that measures the stress-induced Substrate Curvature, and the other that takes advantage of the stress-induced deformation of freestanding, diagnostic microstructures. A general linear dependence of residual stress on SiNx deposition temperature is observed, with the magnitude of stress changing linearly from similar to 300 MPa tensile stress to similar to 600 MPa compressive stress as the deposition temperature is decreased from 300 to 100 degrees C. However, the results deviate from the linear dependence by a different degree for both measurement techniques at low deposition temperatures. The stress values obtained via the Substrate Curvature method deviate from the linear dependence for deposition temperatures below 200 degrees C, whereas the values obtained via the diagnostic microstructures method deviate from the linear dependence for deposition temperatures below 100 degrees C. Stress uniformity over the deposition area is also investigated.