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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Lorenz, N.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2023Development and verification of a cure-dependent visco-thermo-elastic simulation model for predicting the process-induced surface waviness of continuous fiber reinforced thermosetscitations
- 2022Characterization and modeling cure- and pressure-dependent thermo-mechanical and shrinkage behavior of fast curing epoxy resinscitations
- 2021Visco-thermo-elastic simulation approach for prediction of cure-induced residual stresses in fiber reinforced compositescitations
- 2011Hermetic glass frit packaging in air and vacuum with localized laser joiningcitations
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article
Hermetic glass frit packaging in air and vacuum with localized laser joining
Abstract
<p>Glass frit packaging is a simple and robust method used for hermetic sealing of micro-devices. Conventional glass frit packaging processes rely on furnace heating where the entire package is heated to elevated temperatures, hence restricting the use of temperature-sensitive materials inside the package and generating problems in multi-stage packaging processes. The use of a laser as an alternative heat source offers the possibility of highly localized heating where the heat-input can be restricted to the joining area only. In this paper the clear benefits of combining glass frit packaging and localized laser heating are demonstrated. Two novel laser-based glass frit packaging processes for sealing of leadless chip carrier (LCC) packages in both air and vacuum have been developed. Full hermetic seals according to MIL-STD-883G are achieved in high yield processes where the temperature in the centre of the device is kept at least 230 °C below the temperature in the joining region. © 2011 IOP Publishing Ltd.</p>