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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jansen, Henricus V.
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Topics
Publications (13/13 displayed)
- 2013Fabrication of 3D fractal structures using nanoscale anisotropic etching of single crystalline siliconcitations
- 2010Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabricationcitations
- 2009Characterization of MEMS-on-tube assembly: reflow bonding of borosilicate glass (Duran ®) tubes to silicon substratescitations
- 2008Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithographycitations
- 2008Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon
- 2007Simple technique for direct patterning of nanowires using a nanoslit shadow-maskcitations
- 2006Polymeric microsieves produced by phase separation micromoldingcitations
- 2006Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a maskcitations
- 2005Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask
- 2003Wet anisotropic etching for fluidic 1d nanochannelscitations
- 2002Wet anisotropic etching for fluidic 1D nanochannels
- 2000High resolution powder blast micromachiningcitations
- 2000Mask materials for powder blastingcitations
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article
Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask
Abstract
A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7–20 nm wide, 40–100 nm high and centimeters long. All dimensions are easily adjustable by varying the oxidation time, the wet etching time and the mask geometry, respectively. As an additional advantage, the method features a spatial frequency doubling effect. This can be helpful in realizing higher feature densities than would be possible using conventional lithography.