| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tas, Niels Roelof
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2016Ultra-thin nanochannel-based liquid TEM cell for EELS analysis and high resolution imaging
- 2013Fabrication of 3D fractal structures using nanoscale anisotropic etching of single crystalline siliconcitations
- 2010Combining retraction edge lithography and plasma etching for arbitrary contour nanoridge fabricationcitations
- 2008Fabrication of a silicon oxide stamp by edge lithography reinforced with silicon nitride for nanoimprint lithographycitations
- 2008Monolithics silicon nano-ridge fabrication by edge lithography and wet anisotropic etching of silicon
- 2007Simple technique for direct patterning of nanowires using a nanoslit shadow-maskcitations
- 2005Multifunctional tool for expanding afm-based applicationscitations
- 20041-D nanochannels fabricated in polyimidecitations
- 2003Wet anisotropic etching for fluidic 1d nanochannelscitations
- 2002Wet anisotropic etching for fluidic 1D nanochannels
- 2001Failure mechanisms of pressurized microchannels, model, and experimentscitations
- 2000Failure mechanisms of pressurized microchannels, model and experiments
Places of action
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article
Wet anisotropic etching for fluidic 1d nanochannels
Abstract
In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into 110 silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after bonding the nanopatterned wafers with silicon or borofloat-glass wafers. The nanofabrication process is significantly simplified by using native oxide as the main mask material. The etch depth of the nanochannels is limited by the thickness of the native oxide layer, and by the selectivity of the oxide/silicon etch rate (estimated to be at least 250 for 110 silicon at room temperature).