People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Bid, Aveek
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Observation of hidden electronic phases in 1T-TaS<SUB>2</SUB> through conductance fluctuation spectroscopy
- 2022Observation of Quantum Griffith's singularity and anomalous metal in LaScO<SUB>3</SUB>/SrTiO<SUB>3</SUB> heterostructure
- 2022Temperature dependent cloaking of the Quantum Griffiths Singularity in LaScO$_3$/SrTiO$_3$ heterostructures
- 2019Resistance fluctuation spectroscopy of thin films of 3D topological insulator BiSbTeSe<SUB>1.6</SUB>citations
- 2018Strain-induced continuous transition from Weak localization regime to Strong localization regime in a doped Mott Insulator
- 2017Effect of microstructure on the electronic transport properties of epitaxial CaRuO<SUB>3</SUB> thin filmscitations
- 2016Structural instability and phase co-existence driven non-Gaussian resistance fluctuations in metal nanowires at low temperaturescitations
- 2014Probing a spin-glass state in SrRuO<SUB>3</SUB> thin films through higher-order statistics of resistance fluctuationscitations
- 2005Experimental study of Rayleigh instability in metallic nanowires using resistance fluctuations measurements from 77K to 375Kcitations
Places of action
Organizations | Location | People |
---|
article
Structural instability and phase co-existence driven non-Gaussian resistance fluctuations in metal nanowires at low temperatures
Abstract
We report a detailed experimental study of the resistance fluctuations measured at low temperatures in high quality metal nanowires ranging in diameter from 15-200 nm. The wires exhibit co-existing face-centered-cubic and 4H hcp phases of varying degrees as determined from the x-ray diffraction data. We observe the appearance of a large non-Gaussian noise for nanowires of diameter smaller than 50 nm over a certain temperature range around ≈30 K. The diameter range ∼30 nm, where the noise has maxima coincides with the maximum volume fraction of the co-existing 4H hcp phase thus establishing a strong link between the fluctuation and the phase co-existence. The resistance fluctuation in the same temperature range also shows a deviation of 1/f behavior at low frequency with appearance of single frequency Lorentzian type contribution in the spectral power density. The fluctuations are thermally activated with an activation energy {E}<SUB>{{a</SUB>}}∼ 35 meV, which is of same order as the activation energy of creation of stacking fault in FCC metals that leads to the co-existing crystallographic phases. Combining the results of crystallographic studies of the nanowires and analysis of the resistance fluctuations we could establish the correlation between the appearance of the large resistance noise and the onset of phase co-existence in these nanowires....