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Ameruddin, Amira S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Tuning the crystal structure and optical properties of selective area grown InGaAs nanowirescitations
- 2021Tuning the crystal structure and optical properties of selective area grown InGaAs nanowires
- 2020Nanocomposite Assisted Green Synthesis of Polyvinylpyrrolidone-Silver Nanocomposite Using Pandanus atrocarpus Extract for Antiurolithiatic Activity
- 2017Effect on Different Amount of TiO2 P25 powder for Dye-Sensitized Solar Cell application
- 2016Bandgap Energy of Wurtzite InAs Nanowirescitations
- 2015InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologycitations
- 2015InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphologycitations
- 2014Influence of InxGa1-xAs Underlying Layer on the Structural of the In0.5Ga0.5As Quantum Dots Grown by MOCVD
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article
InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology
Abstract
<p>Obtaining compositional homogeneity without compromising morphological or structural quality is one of the biggest challenges in growing ternary alloy compound semiconductor nanowires. Here we report growth of Au-seeded In<sub>xGa</sub>1-xAs nanowires via metal-organic vapour phase epitaxy with uniform composition, morphology and pure wurtzite (WZ) crystal phase by carefully optimizing growth temperature and V/III ratio. We find that high growth temperatures allow the In<sub>xGa</sub>1-xAs composition to be more uniform by suppressing the formation of typically observed spontaneous In-rich shells. A low V/III ratio results in the growth of pure WZ phase In<sub>xGa</sub>1-xAs nanowires with uniform composition and morphology while a high V/III ratio allows pure zinc-blende (ZB) phase to form. Ga incorporation is found to be dependent on the crystal phase favouring higher Ga concentration in ZB phase compared to the WZ phase. Tapering is also found to be more prominent in defective nanowires hence it is critical to maintain the highest crystal structure purity in order to minimize tapering and inhomogeneity. The InP capped pure WZ In<sub>0.65Ga</sub>0.35As core-shell nanowire heterostructures show 1.54 μm photoluminescence, close to the technologically important optical fibre telecommunication wavelength, which is promising for application in photodetectors and nanoscale lasers.</p>