Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (6/6 displayed)

  • 2022Foldable and Recyclable Iontronic Cellulose Nanopaper for Low-Power Paper Electronics26citations
  • 2022Foldable and Recyclable Iontronic Cellulose Nanopaper for Low-Power Paper Electronics26citations
  • 2019Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor16citations
  • 2017High mobility hydrogenated zinc oxide thin films123citations
  • 2014Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors232citations
  • 2012Hydrogen plasma treatment of very thin p-type nanocrystalline Si films grown by RF-PECVD in the presence of B(CH3)(3)12citations

Places of action

Chart of shared publication
Ferreira, Sofia Henriques
2 / 2 shared
Fortunato, Elvira
1 / 25 shared
Martins, Rodrigo
5 / 166 shared
Pereira, Luís
1 / 5 shared
Cunha, Inês
2 / 4 shared
Martins, Jorge
2 / 10 shared
Pereira, Luis
4 / 54 shared
Katerski, Atanas
1 / 9 shared
Acik, Ilona Oja
1 / 5 shared
Oluwabi, Abayomi Titilope
1 / 1 shared
Mere, Arvo
1 / 10 shared
Krunks, Malle
1 / 13 shared
Gehrke, K.
1 / 1 shared
Galler, B.
1 / 1 shared
Fernandes, Joana Gonçalves
1 / 1 shared
Grey, P.
1 / 1 shared
Pontes, R. V.
1 / 1 shared
Godinho, Mh
1 / 13 shared
Oliveira, Alex Grueninger De
1 / 1 shared
Fernandes, Susete
1 / 8 shared
Vicente, António
1 / 3 shared
Leitão, Joaquim
1 / 1 shared
Águas, Hugo
1 / 41 shared
Busani, Tito
1 / 8 shared
Vilarigues, Márcia
1 / 5 shared
Filonovich, Sergej
1 / 14 shared
Chart of publication period
2022
2019
2017
2014
2012

Co-Authors (by relevance)

  • Ferreira, Sofia Henriques
  • Fortunato, Elvira
  • Martins, Rodrigo
  • Pereira, Luís
  • Cunha, Inês
  • Martins, Jorge
  • Pereira, Luis
  • Katerski, Atanas
  • Acik, Ilona Oja
  • Oluwabi, Abayomi Titilope
  • Mere, Arvo
  • Krunks, Malle
  • Gehrke, K.
  • Galler, B.
  • Fernandes, Joana Gonçalves
  • Grey, P.
  • Pontes, R. V.
  • Godinho, Mh
  • Oliveira, Alex Grueninger De
  • Fernandes, Susete
  • Vicente, António
  • Leitão, Joaquim
  • Águas, Hugo
  • Busani, Tito
  • Vilarigues, Márcia
  • Filonovich, Sergej
OrganizationsLocationPeople

article

Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors

  • Fernandes, Joana Gonçalves
  • Grey, P.
  • Pereira, Luis
  • Pontes, R. V.
  • Godinho, Mh
  • Oliveira, Alex Grueninger De
  • Fernandes, Susete
  • Gaspar, Diana
  • Martins, Rodrigo
Abstract

<p>Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties). Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide. Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (&gt;7 cm<sup>2</sup> V <sup>-1</sup> s<sup>-1</sup>), drain-source current on/off modulation ratio higher than 10<sup>5</sup>, enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.</p>

Topics
  • impedance spectroscopy
  • amorphous
  • mobility
  • semiconductor
  • thermal expansion
  • cellulose
  • toxicity
  • field-effect transistor method