| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vehkamäki, Marko
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 20243D-printed sensor electric circuits using atomic layer depositioncitations
- 2023Molecular layer deposition of hybrid silphenylene-based dielectric filmcitations
- 2023Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Filmscitations
- 2022Atomic layer deposition of GdF 3 thin filmscitations
- 2022Atomic layer deposition of GdF3 thin filmscitations
- 2022Atomic layer deposition of GdF3thin filmscitations
- 2022Atomic Layer Deposition of CsI and CsPbI3citations
- 2021Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Depositioncitations
- 2021Highly Material Selective and Self-Aligned Photo-assisted Atomic Layer Deposition of Copper on Oxide Materialscitations
- 2021Atomic Layer Deposition of Rhenium Disulfidecitations
- 2020Photoassisted atomic layer deposition of oxides employing alkoxides as single-source precursorscitations
- 2020Atomic Layer Deposition of PbS Thin Films at Low Temperaturescitations
- 2019As2S3 thin films deposited by atomic layer depositioncitations
- 2019Photoassisted atomic layer deposition of oxides employing alkoxides as single-source precursorscitations
- 2019Photoassisted atomic layer deposition of oxides employing alkoxides as single-source precursorscitations
- 2019Atomic Layer Deposition of PbI₂ Thin Filmscitations
- 2019Atomic Layer Deposition of Emerging 2D Semiconductors, HfS2 and ZrS2, for Optoelectronicscitations
- 2019Toward epitaxial ternary oxide multilayer device stacks by atomic layer depositioncitations
- 2018Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Depositioncitations
- 2018Metal oxide multilayer hard mask system for 3D nanofabricationcitations
- 2018Atomic Layer Deposition of Zirconium Dioxide from Zirconium Tetraiodide and Ozonecitations
- 2018Atomic Layer Deposition of Rhenium Disulfidecitations
- 2017As2S3 thin films deposited by atomic layer depositioncitations
- 2017(Invited) Photo-Assisted ALDcitations
- 2016Electric and Magnetic Properties of ALD-Grown BiFeO3 Filmscitations
- 2016Atomic Layer Deposition of Iridium Thin Films Using Sequential Oxygen and Hydrogen Pulsescitations
- 2016Bismuth iron oxide thin films using atomic layer deposition of alternating bismuth oxide and iron oxide layerscitations
- 2015Atomic layer deposition of zirconium dioxide from zirconium tetrachloride and ozonecitations
- 2015(Et3Si)2Se as a precursor for atomic layer deposition: growth analysis of thermoelectric Bi2Se3citations
- 2015Impedance spectroscopy study of the unipolar and bipolar resistive switching states of atomic layer deposited polycrystalline ZrO2 thin filmscitations
- 2015Studies on atomic layer deposition of IRMOF-8 thin filmscitations
- 2015Selective etching of focused gallium ion beam implanted regions from silicon as a nanofabrication methodcitations
- 2015Atomic Layer Deposition and Characterization of Bi2Te3 Thin Filmscitations
- 2015(Et3Si)(2)Se as a precursor for atomic layer depositioncitations
- 2014Combining focused ion beam and atomic layer deposition in nanostructure fabricationcitations
- 2014Sealing of Hard CrN and DLC Coatings with Atomic Layer Depositioncitations
- 2014Metal oxide films
- 2011Corrosion Protection of Steel with Oxide Nanolaminates Grown by Atomic Layer Depositioncitations
- 2007Degradation effects in TlBr single crystals under prolonged bias voltagecitations
- 2006Atomic layer deposition of ferroelectric bismuth titanate Bi4Ti3O12 thin filmscitations
- 2005New approach to the ALD of Bismuth silicatescitations
Places of action
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article
Combining focused ion beam and atomic layer deposition in nanostructure fabrication
Abstract
Combining the strengths of atomic layer deposition (ALD) with focused ion beam (FIB) milling provides new opportunities for making 3D nanostructures with flexible choice of materials. Such structures are of interest in prototyping microelectronic and MEMS devices which utilize ALD grown thin films. Asmilled silicon structures suffer from segregation and roughening upon heating, however. ALD processes are typically performed at 200–500 C, which makes thermal stability of the milled structures a critical issue. In this work Si substrates were milled with different gallium ion beam incident angles and then annealed at 250 C. The amount of implanted gallium was found to rapidly decrease with increasing incident angle with respect of surface normal, which therefore improves the thermal stability of the milled features. 60 incident angle was found as the best compromise with respect to thermal stability and ease of milling. ALD Al2O3 growth at 250 C on the gallium FIB milled silicon was possible in all cases, even when segregation was taking place. ALD Al2O3 coulbe used both for creating a chemically uniform surface and for controlled narrowing of FIB milled trenches.