| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cueff, Sébastien
Institut des Nanotechnologies de Lyon
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Subpicosecond Spectroscopic Ellipsometry of the Photoinduced Phase Transition in VO 2 Thin Filmscitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb<sub>2</sub>S<sub>3</sub> Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2024Reversible Single‐Pulse Laser‐Induced Phase Change of Sb 2 S 3 Thin Films: Multi‐Physics Modeling and Experimental Demonstrationscitations
- 2023Efficient Optimization of High‐Quality Epitaxial Lithium Niobate Thin Films by Chemical Beam Vapor Deposition: Impact of Cationic Stoichiometrycitations
- 2020Single artificial atoms in silicon emitting at telecom wavelengthscitations
- 2019Perovskite-oxide based hyperbolic metamaterialscitations
- 2019Vanadium Oxide Based Waveguide Modulator Integrated on Silicon
- 2015Modeling the anisotropic electro-optic interaction in hybrid silicon-ferroelectric optical modulatorcitations
- 2012Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ionscitations
- 2012Electrically tailored resistance switching in silicon oxidecitations
Places of action
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article
Electrically tailored resistance switching in silicon oxide
Abstract
Resistive switching in a metal-free silicon-based material offers a compelling alternative to existing metal oxide-based resistive RAM (ReRAM) devices, both in terms of ease of fabrication and of enhanced device performance. We report a study of resistive switching in devices consisting of non-stoichiometric silicon-rich silicon dioxide thin films. Our devices exhibit multi-level switching and analogue modulation of resistance as well as standard two-level switching. We demonstrate different operational modes that make it possible to dynamically adjust device properties, in particular two highly desirable properties: nonlinearity and self-rectification. This can potentially enable high levels of device integration in passive crossbar arrays without causing the problem of leakage currents in common line semi-selected devices. Aspects of conduction and switching mechanisms are discussed, and scanning tunnelling microscopy (STM) measurements provide a more detailed insight into both the location and the dimensions of the conductive filaments.