| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Maurice, Jean-Luc
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Reducing two-level system dissipations in 3D superconducting Niobium resonators by atomic layer deposition and high temperature heat treatmentcitations
- 2024Reducing two-level systems dissipations in 3D superconducting niobium resonators by atomic layer deposition and high temperature heat treatmentcitations
- 2023Reactive plasma sputtering deposition of polycrystalline GaN thin films on silicon substrates at room temperaturecitations
- 2023Evolution of Cu-In Catalyst Nanoparticles under Hydrogen Plasma Treatment and Silicon Nanowire Growth Conditionscitations
- 2020Hydrogen Plasma-Assisted Growth of Gold Nanowirescitations
- 2019Heteroepitaxial growth of silicon on GaAs via low-temperature plasma-enhanced chemical vapor depositioncitations
- 2018Heteroepitaxial growth of Silicon on GaAs via low temperature plasma-enhanced chemical vapor deposition
- 2016Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integrationcitations
- 2012Different mechanisms of graphene wall nucleation on Fe and Ni particles
- 2011Vertically oriented nickel nanorod/carbon nanofiber core/shell structures synthesized by plasma-enhanced chemical vapor depositioncitations
- 2011Iron catalysts for the growth of carbon nanofibers : Fe, Fe_{3}C$ or both?
- 2011Synthesis of few-layered graphene by ion implantation of carbon in nickel thin filmscitations
- 2010Iron catalyst for the growth of carbon nanofibers: Fe, Fe3C or both?citations
- 2010Nickel catalyst faceting in plasma-enhanced direct current chemical vapor deposition of carbon nanofibers
- 2006Interfaces in {100} epitaxial heterostructures of perovskite oxidescitations
Places of action
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article
Synthesis of few-layered graphene by ion implantation of carbon in nickel thin films
Abstract
International audience ; The synthesis of few-layered graphene is performed by ion implantation of carbon species in thin nickel films, followed by high temperature annealing and quenching. Although ion implantation enables a precise control of the carbon content and of the uniformity of the in-plane carbon concentration in the Ni films before annealing, we observe thickness non-uniformities in the synthesized graphene layers after high temperature annealing. These non-uniformities are probably induced by the heterogeneous distribution/topography of the graphene nucleation sites on the Ni surface. Taken altogether, our results indicate that the number of graphene layers on top of Ni films is controlled by the nucleation process on the Ni surface rather than by the carbon content in the Ni film.